Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate dielectrics on Si

被引：29

作者：

Okabayashi, J ^{[1
]}

Toyoda, S

Kumigashira, H

Oshima, M

Usuda, K

Niwa, M

Liu, GL

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[2] Semicond Technol Acad Res Ctr, Kohoku Ku, Kanagawa 2220033, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 24期

关键词：

D O I：

10.1063/1.1835001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal stability of the ZrO2/Zr-silicate/Si structure and the Zr-silicide formation were investigated by photoemission spectroscopy depending on the annealing temperature in ultrahigh vacuum. By the annealing below 860 degreesC, the interfacial layer thickness of the Zr-silicate decreased although the ZrO2 top layer was not affected. The annealing at 860 degreesC caused the interfacial Zr-silicate layer to disappear. By the annealing above 860 degreesC, the metallic Zr components appeared and the metallic clusters were formed. High-resolution photoemission spectra have revealed that the clusters consist of a ZrSi2 layer. Valence-band spectra depending on the annealing temperature provide us with the information about the crystallization in the ZrO2 layer. (C) 2004 American Institute of Physics.

引用

页码：5959 / 5961

页数：3

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