ErAs:GaAs photomixer with two-decade tunability and 12 μW peak output power

被引：110

作者：

Bjarnason, JE ^{[1
]}

Chan, TLJ

Lee, AWM

Brown, ER

Driscoll, DC

Hanson, M

Gossard, AC

Muller, RE

机构：

[1] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Jet Prop Lab, Pasadena, CA 91012 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 18期

关键词：

D O I：

10.1063/1.1813635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports the fabrication and demonstration of an ErAs:GaAs interdigitated photomixer as a tunable THz source ranging from similar to20 GHz to similar to2 THz, with 12 muW maximum power typically around similar to90 GHz. Each photomixer is coupled to a composite dipole-spiral planar antenna that emits a Gaussian-type beam into free space. The beam switches from dipole to spiral antenna behavior as the frequency increases. A distributed Bragg reflector is embedded in the device beneath the photomixer to increase its external quantum efficiency. The photomixer has a 900 Angstrom thick silicon nitride coating which serves as an antireflection and passivation layer, and also improves the reliability and heat tolerance of the device. (C) 2004 American Institute of Physics.

引用

页码：3983 / 3985

页数：3

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