Investigation on MgB2 wires doped by ZrH2

被引:0
|
作者
Xu, H. L.
Feng, Y.
Xu, Z.
Yan, G.
Wu, X. J.
Shen, Z. H.
Mossang, E.
Sulpice, A.
机构
[1] Zhengzhou Univ, Sch Mat Sci & Engn, Zhengzhou 450002, Peoples R China
[2] NW Inst Nonferrous Met Res, Supercond Mat Res Ctr, Xian 710016, Peoples R China
[3] Tongji Univ, Sch Mat Sci & Engn, Shanghai 200092, Peoples R China
[4] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
[5] CNRS, LCMI, F-38042 Grenoble 9, France
[6] CNRS, CRTBT, F-38042 Grenoble, France
基金
中国国家自然科学基金;
关键词
MgB2; wires; ZrH2; doping; microstructure; critical current density;
D O I
10.1007/s10948-006-0197-0
中图分类号
O59 [应用物理学];
学科分类号
摘要
ZrH2-doped MgB2 wires, with the component of Mg:ZrH2:B= (1-x):x:2(x = 0, 5, 8, and 10%), were fabricated through thein situ powder-in-tube method by using low-carbon steel tube as the sheath material Samples were sintered at 750 degrees C for 1h in a flow of high-purity argon.The lattice parameters a and c of MgB(2)exhibit a little decrease with the doping of ZrH2.J(c)(B)property of MgB(2)wires are improved gradually with the increase of x, reaches the best whenx = 8%, but decreases significantlywhen x = 10%. The decrease of MgB(2)grain size, the excellent grain connection, and the substitution of Zr4+ for Mg2+ which is caused by the doping of ZrH2, are responsiblefor the enhancement of J(c)(B)property forthe doped MgB(2)wires.
引用
收藏
页码:255 / 259
页数:5
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