Effect of doping on the Raman scattering of 6H-SiC crystals

被引：33

作者：

Li, Xiang-Biao ^{[1
]}

Chen, Zhi-Zhan ^{[1
]}

Shi, Er-Wei ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2010年 / 405卷 / 10期

基金：

上海市自然科学基金;

关键词：

Raman scattering; Silicon carbide crystal; Doping; SIC POLYTYPES; SILICON-CARBIDE; MODES;

D O I：

10.1016/j.physb.2010.02.058

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Raman spectra of Al- and N-doped 6 H-SiC crystal samples with different doping levels were measured. The first-order Raman spectra of the samples were shifted to higher frequency when the doping concentrations were increased. Compared with Al-doped samples, the intensity of AI longitudinal optical mode of N-doped ones changed obviously, which reflected the different doping concentrations. The second-order Raman spectra were not dependent on the doping types and concentrations. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2423 / 2426

页数：4

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