Terahertz Photoconductive Antennas at 800 nm, 1000 nm, and 1550 nm: A Performance Comparison

被引：0
|
作者：
Saeedkia, Daryoosh [1 ]
Kostakis, Ioannis [2 ]
Missous, Mohamed [2 ]
机构：
[1] TeTechS Inc, Waterloo, ON, Canada
[2] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England
来源：
2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2013年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Terahertz photoconductive antennas are fabricated on low-tern perature-grown GaAs, low-tern perature-grown In0.3Ga0.7As, and beryllium (Be) doped low-tern perature-grown lattice-matched In0.53Ga0.47As-In(0.52)Al(0.4)sAs multi-quantum wells material systems for 800 nm, 1000 nm, and 1550 nm operation wavelengths. Several narrow band and broad band antenna designs are fabricated and tested under pulse and cw excitation, and their performances in terms of signal to noise ratio, dynamic rand, and bandwidth are compared.
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