Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110)

被引：40

作者：

Ebert, P

Urban, K

Aballe, L

Chen, CH

Horn, K

Schwarz, G

Neugebauer, J

Scheffler, M

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.84.5816

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The atomic and electronic structure of positively charged P vacancies on InP(101) surfaces is determined by combining scanning tunneling microscopy, photoelectron spectroscopy, and density-functional theory calculations. The vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge transfer level 0.75 +/- 0.1 eV above the valence band maximum. The scanning tunneling microscopy (STM) images show only a time average of two degenerate geometries, due to a thermal nip motion between the mirror configurations. This leads to an apparently symmetric STM image, although the ground state atomic structure is nonsymmetric.

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页码：5816 / 5819

页数：4

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