Negative differential resistance in nanotube devices

被引：87
作者：
Léonard, F [1 ]
Tersoff, J [1 ]
机构：
[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
来源：
PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.85.4767
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-binding approximation. The undoped junctions in particular maybe suitable for device integration.
引用
收藏
页码：4767 / 4770
页数：4
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