Negative differential resistance in nanotube devices

被引：87

作者：

Léonard, F ^{[1
]}

Tersoff, J ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.85.4767

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-binding approximation. The undoped junctions in particular maybe suitable for device integration.

引用

页码：4767 / 4770

页数：4

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