Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots

被引：35

作者：

Ban, Keun-Yong ^{[1
]}

Bremner, Stephen P. ^{[2
]}

Liu, Guangming ^{[3
]}

Dahal, Som N. ^{[1
]}

Dippo, Patricia C. ^{[4
]}

Norman, Andrew G. ^{[4
]}

Honsberg, Christiana B. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

[3] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

[4] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 18期

关键词：

atomic force microscopy; buffer layers; III-V semiconductors; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; MOLECULAR-BEAM EPITAXY; OPTICAL-PROPERTIES; GROWTH; ISLANDS; WELLS; MODEL; SIZE; BAND;

D O I：

10.1063/1.3409691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs quantum dots grown on GaAsSb buffer layers with varying Sb content have been studied. Atomic force microscopy results show that the dot size is reduced as the Sb content increases with a concomitant increase in number density. Analysis of the size distribution indicates that the spread of dot sizes narrows with increasing Sb content. This is confirmed by photoluminescence measurements showing a significant narrowing of the dot emission peak for a GaAs(0.77)Sb(0.23) buffer compared to a GaAs buffer. The results are attributed to the strained buffer reducing interactions between dots and the Sb acting as a surfactant. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3409691]

引用

页数：3

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