Temperature dependence of raman scattering in ZnO

被引:1311
作者
Cusco, Ramon
Alarcon-Llado, Esther
Ibanez, Jordi
Artus, Luis
Jimenez, Juan
Wang, Buguo
Callahan, Michael J.
机构
[1] CSIC, Inst Jaume Almera, Barcelona 08028, Spain
[2] Univ Valladolid, ETSII, Dept Fis Mat Condensada, E-47002 Valladolid, Spain
[3] Solid State Sci Corp, Hollis, NH 03049 USA
[4] USAF, Res Lab, Sensors Directorate, Electromagnet Technol Div,Optoelect Technol Branc, Hanscom AFB, MA 01731 USA
关键词
D O I
10.1103/PhysRevB.75.165202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a Raman scattering study of wurtzite ZnO over a temperature range from 80 to 750 K. Second-order Raman features are interpreted in the light of recent ab initio phonon density of states calculations. The temperature dependence of the Raman intensities allows the assignment of difference modes to be made unambiguously. Some weak, sharp Raman peaks are detected whose temperature dependence suggests they may be due to impurity modes. High-resolution spectra of the E-2(high), A(1)(LO), and E-1(LO) modes were recorded, and an analysis of the anharmonicity and lifetimes of these phonons is carried out. The E-2(high) mode displays a visibly asymmetric line shape. This can be attributed to anharmonic interaction with transverse and longitudinal acoustic phonon combinations in the vicinity of the K point, where the two-phonon density of states displays a sharp edge around the E-2(high) frequency. The temperature dependence of the linewidth and frequency of the E-2(high) mode is well described by a perturbation-theory renormalization of the harmonic E-2(high) frequency resulting from the interaction with the acoustic two-phonon density of states. In contrast, the A(1)(LO) and E-1(LO) frequencies lie in a region of nearly flat two-phonon density of states, and they exhibit a nearly symmetric Lorentzian line shape with a temperature dependence that is well accounted for by a dominating asymmetric decay channel.
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页数:11
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