Preparation of CuIn1-xGaxSe2 films by metalorganic chemical vapor deposition using three precursors

被引：24

作者：

Choi, I. H. ^{[1
]}

Lee, D. H. ^{[1
]}

机构：

[1] Chung Ang Univ, Dept Phys, Seoul 156756, South Korea

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 11期

关键词：

CIGS; CIS; CulnSe(2); CulnGaSe(2);

D O I：

10.1016/j.tsf.2006.11.078

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CulnGaSe(2) thin films have been prepared by a low pressure metalorganic chemical vapor deposition technique using three precursors without additional Se. The properties of the resultant films have been examined by scanning electron microscopy, X-ray diffraction, micro-Raman scattering and absorption spectroscopy. (c) 2006 Elsevier B.V. All rights reserved.

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页码：4778 / 4782

页数：5

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