Scanning deep level transient spectroscopy measurements of extended defects in silicon

A capacitance scanning deep level transient spectroscopy system with a sensitivity of (Delta C degrees/C)=10(-6) was developed. For a multicrystalline Si sample it is demonstrated that the sensitivity of the system is sufficient to allow measurements of the spatial distribution of deep levels of technologically relevant concentrations. Specific issues of electron beam excited deep level transient spectroscopy (interface states, excitation conditions, capture of carriers) are addressed.