Improvement in the electrical properties of GaAs/InAs/GaAs structures through the use of (111)A substrates

被引：25

作者：

Yamaguchi, H ^{[1
]}

Hirayama, Y ^{[1
]}

机构：

[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 24301, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

GaAs; InAs; (111)A; quantum well; dislocations; Fermi level pinning; two-dimensional electron systems;

D O I：

10.1143/JJAP.37.1599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the electrical properties of InAs thin films embedded in GaAs layers grown by solid source molecular beam epitaxy on (111)A and (001) substrates. A major improvement in Hall mobility through the use of (111)A substrates is confirmed. The carrier concentration is found to saturate at a value of 3 x 10(12) cm(-2) after 50 nm as a function of the InAs thickness. Self-consistent calculation assuming interface Fermi level pinning produces results which are in good agreement with the experimental results, and the pinning position is estimated to be about 0.15 eV above the bottom of the conduction band. The origin of Fermi level pinning seems to be the misfit dislocations confined at the InAs/GaAs interfaces based on structural characterization by transmission electron microscopy.

引用

页码：1599 / 1602

页数：4

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