New World-Record Efficiency for Pure-Sulfide Cu(In,Ga)S2 Thin-Film Solar Cell With Cd-Free Buffer Layer via KCN-Free Process

被引：88

作者：

Hiroi, Homare ^{[1
]}

Iwata, Yasuaki ^{[1
]}

Adachi, Shunsuke ^{[1
]}

Sugimoto, Hiroki ^{[1
]}

Yamada, Akira ^{[2
]}

机构：

[1] Solar Frontier KK, Atsugi Res Ctr, Atsugi, Kanagawa 2430206, Japan

[2] Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528550, Japan

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2016年 / 6卷 / 03期

关键词：

Cd-free buffer layer; KCN-free process; puresulfide Cu(In; Ga)S-2;

D O I：

10.1109/JPHOTOV.2016.2537540

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

World-record conversion efficiency of 15.5%, which is a number independently certified by an external accredited laboratory, was achieved on a pure-sulfide Cu(In,Ga)S-2 (CIGS) thin-film solar cell fabricated by metal sputtering and H2S gas sulfurization. This is the highest conversion efficiency reported for pure-sulfide CIGS thin-film solar cells. We exceeded the limit of 15% efficiency thanks to the buffer layer optimization. The buffer layer consists of Cd-free materials, and the absorber was fabricated via a KCN-free process.

引用

页码：760 / 763

页数：4

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