Barrier height of Ga-pSi(p) Schottky diodes

被引：1

作者：

Patel, KD ^{[1
]}

Modi, BP ^{[1
]}

Srivastava, R ^{[1
]}

机构：

[1] Sardar Patel Univ, Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India

来源：

SOLID STATE PHENOMENA | 1997年 / 55卷

关键词：

Schottky diodes; gallium on p-silicon; atomic ordering; crystallography;

D O I：

10.4028/www.scientific.net/SSP.55.183

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ga-Si(p) diodes have been fabricated and investigated by making contact of liquid gallium on etched silicon (100) surface. Analysis of data on barrier height exhibits a prominent change in its value across its freezing point,It is belived to be related to the changes in the atomic ordering occurring due to change of phase associated with freezing of gallium.

引用

页码：183 / 185

页数：3

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