Comparison of Single Event Transients Generated by Short Pulsed X-Rays, Lasers and Heavy Ions

被引:17
作者
Cardoza, David [1 ]
LaLumondiere, Stephen D. [1 ]
Tockstein, Michael A. [2 ]
Brewe, Dale L. [3 ]
Wells, Nathan P. [1 ]
Koga, Rokutaro [4 ]
Gaab, Kevin M. [1 ]
Lotshaw, William T. [1 ]
Moss, Steven C. [2 ]
机构
[1] Aerosp Corp, Phys Sci Labs, Elect & Photon Lab, Photon Technol Dept, Los Angeles, CA 90009 USA
[2] Aerosp Corp, Phys Sci Labs, Elect & Photon Lab, Microelect Technol Dept, Los Angeles, CA 90009 USA
[3] Argonne Natl Lab, Adv Photon Source, PNC XSD Facil Sect 20, Argonne, IL USA
[4] Aerosp Corp, Space Sci Applicat Lab, Phys Sci Labs, Los Angeles, CA 90009 USA
关键词
Integrated circuit reliability; radiation hardening; semiconductor device reliability; single event effects; single event transients; synchrotron radiation; x-ray applications; HIGHLY DOPED SILICON; HOLE MOBILITY; MICROBEAM; LIGHT; MICROCIRCUITS; COEFFICIENTS; ABSORPTION; CIRCUITS; DEVICES; UPSETS;
D O I
10.1109/TNS.2014.2368057
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report an experimental study of the transients generated by pulsed x-rays, heavy ions, and different laser wavelengths in a Si p-i-n photodiode. We compare the charge collected by all of the excitation methods to determine the equivalent LET for pulsed x-rays relative to heavy ions. Our comparisons show that pulsed x-rays from synchrotron sources can generate a large range of equivalent LET and generate transients similar to those excited by laser pulses and heavy ion strikes. We also look at how the pulse width of the transients changes for the different excitation methods. We show that the charge collected with pulsed x-rays is greater than expected as the x-ray photon energy increases. Combined with their capability of focusing to small spot sizes and of penetrating metallization, pulsed x-rays are a promising new tool for high resolution screening of SEE susceptibility.
引用
收藏
页码:3154 / 3162
页数:9
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