Field emission characteristics of chemical vapor deposited diamond thin films with SnO2 as overlayer on silicon

被引：5

作者：

Koinkar, PM ^{[1
]}

Mahajan, JR ^{[1
]}

Patil, PP ^{[1
]}

More, MA ^{[1
]}

机构：

[1] N Maharashtra Univ, Sch Phys Sci, Dept Phys, Jalgaon 425001, India

来源：

THIN SOLID FILMS | 2005年 / 474卷 / 1-2期

关键词：

chemical vapor deposition; diamond films; Sn-2; overlayer; Raman spectroscopy; atomic force microscopy;

D O I：

10.1016/j.tsf.2004.08.174

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the field emission characteristics of chemically vapor deposited diamond thin films deposited on silicon substrate with tin-oxide (SnO2) as an overlayer. The diamond thin films were synthesized using the hot filament chemical vapor deposition method. The SnO2 coating on silicon substrate was prepared using Spray Pyrolysis technique. The diamond thin films were characterized by Raman spectroscopy and atomic force microscopy. The field emission current-voltage (I-V) measurements were performed in 'diode' configuration at a base pressure similar to1 x 10(-8) mbar. The diamond films with SnO2 overlayer exhibit better emission characteristics as compared with normal diamond films. Also, the turn-on voltage required to draw 0.1 muA current for such films was found to be similar to40% less than that deposited on normal silicon substrate. The surface roughness revealed by atomic force microscopy is found to be similar to4.5 and 4.0 nm for diamond films with and without SnO2 overlayer, respectively. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：275 / 278

页数：4

共 25 条

[1] FIELD-EMISSION FROM ION-MILLED DIAMOND FILMS ON SI [J].

ASANO, T ;

OOBUCHI, Y ;

KATSUMATA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :431-434

[2]

EIMORI N, 1993, JPN J APPL PHYS, V33, P632

[3] Field-emission studies of boron-doped CVD diamond films following surface treatments [J].

Fox, NA ;

Mary, S ;

Davis, TJ ;

Wang, WN ;

May, PW ;

Bewick, A ;

Steeds, JW ;

Butler, JE .

[4] CAPACITANCE-VOLTAGE MEASUREMENTS ON METAL-SIO2-DIAMOND STRUCTURES FABRICATED WITH (100)-ORIENTED AND (111)-ORIENTED SUBSTRATES [J].

GEIS, MW ;

GREGORY, JA ;

PATE, BB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) :619-626

[5] ELECTRON FIELD-EMISSION FROM DIAMOND AND OTHER CARBON MATERIALS AFTER H-2, O-2 AND CS TREATMENT [J].

GEIS, MW ;

TWICHELL, JC ;

MACAULAY, J ;

OKANO, K .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1328-1330

[6] Modifying chemical vapor deposited diamond films for field emission displays [J].

Habermann, T ;

Gohl, A ;

Nau, D ;

Wedel, M ;

Muller, G ;

Christ, M ;

Schreck, M ;

Stritzker, B .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02) :693-696

[7] Pretreatment effects by aqua-regia solution on field emission of diamond film [J].

Han, SY ;

Kim, JK ;

Lee, JL ;

Baik, YJ .

APPLIED PHYSICS LETTERS, 2000, 76 (25) :3694-3696

[8] QUANTUM PHOTOYIELD OF DIAMOND(111) - STABLE NEGATIVE-AFFINITY EMITTER [J].

HIMPSEL, FJ ;

KNAPP, JA ;

VANVECHTEN, JA ;

EASTMAN, DE .

PHYSICAL REVIEW B, 1979, 20 (02) :624-627

[9] THEORETICAL-STUDY OF FIELD-EMISSION FROM DIAMOND [J].

HUANG, ZH ;

CUTLER, PH ;

MISKOVSKY, NM ;

SULLIVAN, TE .

APPLIED PHYSICS LETTERS, 1994, 65 (20) :2562-2564

[10] DIAMOND NUCLEATION ON EPITAXIALLY GROWN Y-ZRO2 LAYERS ON SI(100) [J].

KANETKAR, SM ;

KULKARNI, AA ;

VAIDYA, A ;

VISPUTE, RD ;

OGALE, SB ;

KSHIRSAGAR, ST ;

PURANDARE, SC .

APPLIED PHYSICS LETTERS, 1993, 63 (06) :740-742

← 1 2 3 →