Evolution of ion track profiles in arnorphous SiO2

被引：3
作者：
Saint Martin, G.
Bernaola, O. A.
Garcia Bermudez, G.
Behar, M.
机构：
[1] Comis Nacl Energia Atom, Lab Tandar, UA Radiobiol, RA-1429 Buenos Aires, DF, Argentina
[2] Comis Nacl Energia Atom, UA Fis, RA-1429 Buenos Aires, DF, Argentina
[3] Univ Nacl Gen San Martin, Escuela Ciencia & Tecnol, San Martin, Buenos Aires, Argentina
[4] Consejo Nacl Invest Cient & Tecn, Los Ruices, Caracas, Argentina
[5] Univ Fed Rio Grande do Sul, Inst Fis, Porto Alegre, RS, Brazil
来源：
RADIATION MEASUREMENTS | 2007年 / 42卷 / 02期
关键词：
track profiles; SiO2;
D O I：
10.1016/j.radmeas.2006.12.014
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
The folding track replica method is applied to study the amorphous SiO2 layer Of Si-SiO2 wafers irradiated with beams of 118 MeV Au-197 and 80 and 106MeV I-127 ions. This technique is used to evaluate single track profiles. Measurements of the dimensions and shape of ion track profiles obtained by the track replica technique and observed with transmission electron microscopy are used to determine the curves of diameter and track length evolution with etching time. At certain etching time, an unexpected restriction on the chemical attack velocity at the track vertex is observed. A local generation of recrystallized silicon nanostructures is suggested as a possible explanation of this behaviour. A comparison is also made between results obtained by this technique and by AFM tapping mode observations. (c) 2007 Published by Elsevier Ltd.
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收藏
页码：130 / 134
页数：5
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