Relation between inelastic electron tunneling and vibrational excitation of single adsorbates on metal surfaces

被引:50
作者
Tikhodeev, SG
Ueba, H
机构
[1] RAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
[2] Toyama Univ, Dept Elect, Toyama 9308555, Japan
来源
PHYSICAL REVIEW B | 2004年 / 70卷 / 12期
基金
日本学术振兴会; 俄罗斯基础研究基金会;
关键词
D O I
10.1103/PhysRevB.70.125414
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We analyze theoretically a relation between the vibrational generation rate of a single adsorbate by tunneling electrons and the inelastic tunneling (IET) current in scanning tunneling microscope, and the influence of the vibrational excitations on the rate of adsorbate motions. Special attention is paid to the effects of finite lifetime of the vibrational excitations. We show that in the vicinity and below the IET threshold the rate of adsorbate motion deviates from a simple power-law dependence on the bias voltage due to the effects of bath temperature and adsorbate vibrational lifetime broadenings. The temperature broadening appears to be confined near the threshold voltage within a narrow region of several k(B)T, whereas the lifetime broadening manifests itself in a much wider region of applied voltages below the IET threshold.
引用
收藏
页码:125414 / 1
页数:7
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