Electron attachment:: A new approach to H2 fluxless solder reflow for wafer bumping

被引:2
作者
Dong, C. Christine [1 ]
Patrick, Richard E. [1 ]
Karwacki, Eugene J. [1 ]
机构
[1] Air Prod & Chem Inc, Elect Res & Dev Grp, Allentown, PA 18195 USA
来源
IEEE TRANSACTIONS ON ADVANCED PACKAGING | 2007年 / 30卷 / 03期
关键词
electric field effects; electron attachment; electron emission; fluxless solder reflow; hydrogen; wafer bumping; wafer-scale integration;
D O I
10.1109/TADVP.2007.901581
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Wafer bumping, via fluxless solder reflow, can be performed using electron attachment (EA) with nonflammable mixtures of hydrogen (<= 4 vol%) in nitrogen. The EA process facilitates dissociation of molecular hydrogen at ambient pressure and a temperature significantly lower than that of thermal dissociation. Our studies suggest that the EA process promotes the formation of atomic hydrogen anions, which reduce solder oxides and facilitate fluxless solder reflows at temperatures close to the solder melting point.
引用
收藏
页码:485 / 490
页数:6
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