Deep-ultraviolet stimulated emission from AlGaN/AlN multiple-quantum-wells on nano-patterned AlN/sapphire templates with reduced threshold power density

被引：11

作者：

Chen, Xiang ^{[1
,2
]}

Zhang, Yun ^{[1
,2
,3
,4
]}

Yan, Jianchang ^{[1
,3
,4
]}

Guo, Yanan ^{[1
,2
]}

Zhang, Shuo ^{[1
,2
]}

Wang, Junxi ^{[1
,2
,3
,4
]}

Li, Jinmin ^{[1
,2
,3
,4
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Beijing Engn Res Ctr 3rd Generat Semicond Mat & A, Beijing, Peoples R China

[4] State Key Lab Solid State Lighting, Beijing 100083, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 723卷

基金：

国家重点研发计划;

关键词：

Nano-patterned substrate; Nanoscale ELOG; Nitride materials; AlN; UV LD; HIGH-QUALITY ALN; SAPPHIRE; EFFICIENCY;

D O I：

10.1016/j.jallcom.2017.06.240

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We first report deep-ultraviolet (DUV) stimulated emission by optical pumping of AlGaN/AlN multiple-quantum-wells (MQWs) on nano-patterned AlN/sapphire (NP-AlN/sapphire) templates with significant threshold power density (P-th) reduction. Thanks to nanoscale lateral overgrowth on nano-holes patterns, the full width at half-maximum values of (0002) and (10 (1) over bar2) X-ray diffraction rocking curves of the NPAlN/sapphire template are 85 and 338 arcsec, deducing 71% less threading dislocations than the planar AlN/sapphire template. AlGaN/AlN MQWs on the NP-AlN/sapphire template exhibit DUV stimulated emission at 271.9 nm with spectral linewidth of 0.66 nm and P-th of 810 kW/cm(2), 68% lower compared to the same MQWs structure on a traditional planar AlN/sapphire template. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：192 / 196

页数：5

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