Enhanced Perpendicular Spin Transfer Torque in Magnetic Multilayers With a Capping Layer

被引：0

作者：

Chung, Nyuk Leong ^{[1
,2
]}

Jalil, Mansoor B. A. ^{[1
,3
]}

Tan, Seng Ghee ^{[2
,3
]}

机构：

[1] Natl Univ Singapore, Informat Storage Mat Lab, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] ASTAR, Data Storage Inst, Singapore 117608, Singapore

[3] Natl Univ Singapore, Computat Nanoelect & Nanodevice Lab, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2010年 / 46卷 / 06期

关键词：

Magnetic-film memories; magnetic films; magnetoresistance; spin transfer torque; TEMPERATURE; REVERSAL; SYSTEMS; VALVE;

D O I：

10.1109/TMAG.2010.2044141

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we model the effects of the physical properties of the capping layer, such as spin diffusion length (l(sf)(cap)), resistivity (rho(cap)), and interfacial conductance (G(up arrow)(cap), G(down arrow)(cap)) on the spin transport across a pseudo-spin-valve (PSV) structure. In particular, we investigate how the properties of the capping layer can be modified in order to enhance the perpendicular component (tau(perpendicular to)) of the spin transfer torque vis-a-vis the inplane (tau(parallel to)) component. The results suggest that the capping layer can serve as an effective medium for tuning the ratio tau(perpendicular to) of tau(parallel to) to by varying its physical properties.

引用

页码：1580 / 1583

页数：4

共 23 条

[1] From giant magnetoresistance to current-induced switching by spin transfer [J].