Synthesis of high-purity boron nitride single crystals under high pressure by using Ba-BN solvent

被引：473

作者：

Taniguchi, T. ^{[1
]}

Watanabe, K. ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Adv Nanomat Lab, High Pressure Grp, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 303卷 / 02期

基金：

日本学术振兴会;

关键词：

impurities; growth from high-temperature solutions; high-pressure crystal growth; boron nitride; semiconducting III-V materials; ultraviolet light luminescence;

D O I：

10.1016/j.jcrysgro.2006.12.061

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-purity cubic boron nitride (cBN) and hexagonal boron nitride (hBN) single crystals were synthesised at 4.5 GPa and 1500 degrees C using barium boron nitride as a solvent. Secondary ion mass spectrometry was used to analyse impurities in the crystals. Fine cBN and hBN crystals, whose oxygen and carbon concentrations were less than 10(18) atoms/cm(3), were obtained, and their band-edge optical properties were measured by cathodoluminescence spectroscopy. High-purity hBN single crystals exhibited intense ultraviolet emission, demonstrating their promise for use as deep ultraviolet-light emitters. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：525 / 529

页数：5

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