Influence of the intensity of γ irradiation on the photoluminescence of GaAs:Te

被引：1

作者：

Dubovik, VI ^{[1
]}

Bogdanova, VA ^{[1
]}

Davletkil'deev, NA ^{[1
]}

Semikolenova, NA ^{[1
]}

Shutyak, OA ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Sensor Microelect, Siberian Branch, Omsk 644077, Russia

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 01期

关键词：

GaAs; Magnetic Material; Electromagnetism; Edge Band; Impurity Center;

D O I：

10.1134/1.1187355

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of gamma irradiation (Co-60) Of various intensities (P-gamma approximate to 1.7-7.5 kGR/h) on the photoluminescence of GaAs:Te single crystals [n(0)=(1.2-2.3x10(18) cm(-3)] is investigated Together with the known photoluminescence impurity bands (h nu(max) approximate to 1.2 eV and/or h nu(max) approximate to 1.35 eV) and edge band (h nu(max) approximate to 1.51 eV), new bands are also observed in the spectra at h nu(max) approximate to 1.3 eV and h nu(max) approximate to 1.48 eV. The observed effects are attributed to radiation-stimulated ordering of the donor impurity and deep impurity centers. (C) 1998 American Institute of Physics.

引用

页码：31 / 32

页数：2

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