Flexible, hole transporting layer-free and stable CH3NH3PbI3/PC61BM planar heterojunction perovskite solar cells

被引:67
作者
Zhang, Yong [1 ]
Hu, Xiaotian [1 ]
Chen, Lie [1 ,2 ]
Huang, Zengqi [1 ]
Fu, Qingxia [1 ]
Liu, Yawen [1 ]
Zhang, Lin [1 ]
Chen, Yiwang [1 ,2 ]
机构
[1] Nanchang Univ, Inst Polymers, Coll Chem, 999 Xuefu Ave, Nanchang 330031, Peoples R China
[2] Nanchang Univ, Jiangxi Prov Key Lab New Energy Chem, 999 Xuefu Ave, Nanchang 330031, Peoples R China
关键词
Perovskites; Solar cells; Hole transporting layer-free; Flexibility; DEVICE EFFICIENCY; CONDUCTOR-FREE; PERFORMANCE; DEPOSITION; TRIHALIDE; LENGTHS; GROWTH; TIN;
D O I
10.1016/j.orgel.2016.01.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Hole transporting layer (HTL)-free CH3NH3PbI3/PC61BM planar heterojunction perovskite solar cells were fabricated with the configuration of ITO/CH3NH3PbI3/PC61BM/Al. The devices present a remarkable power conversion efficiency (PCE) of 11.7% (12.5% best) under AM 1.5G 100 mW cm(-2) illumination. Moreover, the HTL-free perovskite solar cells on flexible PET substrates are first demonstrated, achieving a power conversion efficiency of 9.7%. The element distribution in the HTL-free perovskite solar cell was further investigated. The results indicated that the PbI2 enriched near the PC61BM side for chlorobenzene treatment via the fast deposition crystallization method. Without using HTL on the ITO, the device is stable with comparison to that with poly(3,4-ethylenedioxylenethiophene): poly(styrene sulfonate) (PEDOT:PSS) as HTL. In addition, the fabricating time of the whole procedure from ITO substrate cleaning to device finishing fabrication only cost about 3 h for our mentioned devices, which is much more rapid than other structure devices containing other transporting layer. The high efficient and stable HTL-free CH3NH3PbI3/PC61BM planar heterojunction perovskite solar cells with the advantage of saving time and cost provide the potential for commercialization printing electronic devices. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:281 / 288
页数:8
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