Performance Optimization of Ge/SiGe MQW-Electroabsorption Modulator for Optical Short Pulse Generation

The Electroabsorption Modulators made of InGaAsP/InP Multiple Quantum Wells (MQWs) are used in optical fibre communication links. EAMs also find applications in various other areas, an example being narrow pulse generation. The pulse width of generated pulses depends on EA modulator extinction efficiency. The operation of the devices is based on Quantum Confined Stark Effect (QCSE). There have been several unsuccessful attempts to observe QCSE in Si/SiGe MQWs, and to exploit the effect to realize EAM and other devices. Recently, Kuo et al observed strong QCSE in Si based structures. So it is very much necessary to design a highly efficient Si-Ge MQW EA modulator In this present work we have proposed several figure-of-merits (FoMs) for optimization of the performance.