Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering

被引：7

作者：

Jo, Wonhyuk ^{[1
,2
]}

Landahl, Eric C. ^{[3
]}

DiChiara, Anthony D. ^{[4
]}

Walko, Donald A. ^{[4
]}

Lee, Sooheyong ^{[1
,5
]}

机构：

[1] Korea Res Inst Stand & Sci, Daejeon 305340, South Korea

[2] Soong Sil Univ, Dept Phys, Seoul 06978, South Korea

[3] DePaul Univ, Deparunent Phys, Chicago, IL 60614 USA

[4] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[5] UST, Dept Nanosci, Daejeon 305340, South Korea

来源：

APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

AMBIPOLAR DIFFUSION; PROPAGATION;

D O I：

10.1063/1.5039582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that time-resolved x-ray scattering can be applied to polycrystalline materials for the measurement of carrier diffusion. A polycrystalline indium antimonide sample is prepared by high-intensity ultrafast laser surface melting and re-solidification under vacuum to create randomly oriented grains with an average size of 13 nm. Two static diffraction rings are simultaneously observed on a gated pixel array detector. Their centroids move following lower-intensity laser excitation, and utilizing an in-situ angular calibration, the transient lattice spacing is determined with femtometer accuracy, thereby allowing the measurement of charge carrier dynamics. Compared to bulk calculations, we find that carrier diffusion slows by more than one order of magnitude. This result provides evidence for the formation of potential energy barriers at the grain boundaries and demonstrates the capability of time-resolved x-ray scattering to probe nanoscale charge transport in materials other than near-perfect crystals. (C) 2018 Author(s).

引用

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