Polysilicon thin film developed on ultra-thin flexible glass for temperature sensor

被引：0
|
作者：
Quintana, Juan M. [1 ]
Nguyen, Thinh H. [1 ]
Ahn, Chong H. [1 ]
机构：
[1] Univ Cincinnati, Dept EECS, Microsyst & BioMEMS Lab, Cincinnati, OH 45221 USA
来源：
2020 IEEE SENSORS | 2020年
关键词：
Aluminum induced crystallization; polysilicon thin film; flexible glass substrate; temperature microsensor; flow microsensor; POLYCRYSTALLINE SILICON; SIZE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A polycrystalline silicon (poly-Si) thin film has been developed on an ultra-thin flexible glass (uTFG) substrate using the aluminum-induced crystallization (AIC) method, and then fully characterized as a semiconductor material for the application of high-sensitive thermal sensors. The developed poly-Si thin film has a sheet resistance of similar to 3.7 K Omega/square with a temperate coefficient of resistance (TCR) of 2,800 ppm/degrees C. In comparison to poly-Si thin-film material grown on polyimide substrate via similar processing parameters, this poly-Si on uTFG shows an improvement in thermal sensitivity of 12 % compared to poly-Si thin-film developed on polyimide. Thus, the poly-Si thin film produced on the uTGF can allow a higher sensitivity for temperature, which can be used for high precision temperature sensing while offering some level of material flexibility for biomedical applications.
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页数：4
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