Two-step photon absorption in InP/InGaP quantum dot solar cells

被引：12

作者：

Kum, Hyun ^{[1
,3
]}

Dai, Yushuai ^{[1
]}

Aihara, Taketo ^{[2
]}

Slocum, Michael A. ^{[1
]}

Tayagaki, Takeshi ^{[2
]}

Fedorenko, Anastasiia ^{[1
]}

Polly, Stephen J. ^{[1
]}

Bittner, Zachary ^{[1
]}

Sugaya, Takeyoshi ^{[2
]}

Hubbard, Seth M. ^{[1
]}

机构：

[1] Rochester Inst Technol, Nanopower Res Labs, Rochester, NY 14623 USA

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[3] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 04期

关键词：

JUNCTION; ISLANDS; GROWTH; EFFICIENCY; GAAS;

D O I：

10.1063/1.5037238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intermediate band solar cells promise improved efficiencies beyond the Shockley-Queisser limit by utilizing an intermediate band formed within the bandgap of a single junction solar cell. InP quantum dots (QDs) in an In0.49Ga0.51P host are a promising material system for this application, but two-step photon absorption has not yet been demonstrated. InP QDs were grown via metalorganic chemical vapor deposition, and a density, a diameter, and a height of 0.7 x 10(10)cm(-2), 56 +/- 10 nm, and 18 +/- 2.8 nm, respectively, were achieved. Time-resolved photoluminescence measurements show a long carrier lifetime of 240 ns, indicating a type-II band alignment of these InP quantum dots. Several n-i-p In0.49Ga0.51P solar cells were grown with both 3 and 5 layers of InP QDs in the i-region. While the solar cells showed an overall loss in short circuit current compared to reference cells due to emitter degradation, a sub-bandgap enhancement of 0.11 mA/cm(2) was clearly observed, due to absorption and collection from the InP QDs. Finally, two-step photon absorption experiments have shown unambiguous photocurrent generation involving an intermediate band within the bandgap at temperatures up to 250 K. Published by AIP Publishing.

引用

页数：5

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[1] Two-step photon absorption in InAs/GaAs quantum-dot superlattice solar cells [J].

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Kaizu, T. ;

Harada, Y. ;

Kita, T. ;

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Miyano, K. .

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[2] Universal Linear Relationship on Two-Step Photon Absorption Processes in In(Ga)As Quantum Dot Solar Cells [J].

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Okada, Yoshitaka .

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[3] Design optimization for two-step photon absorption in quantum dot solar cells by using infrared photocurrent spectroscopy [J].

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[4] Spectrally Resolved Interband and Intraband Transitions by Two-Step Photon Absorption in InGaAs/GaAs Quantum Dot Solar Cells [J].

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[5] InGaP-based InP quantum dot solar cells with extended optical absorption range [J].

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Sugaya, Takeyoshi .

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[7] Direct Observation of Two-Step Photon Absorption in an InAs/GaAs Single Quantum Dot for the Operation of Intermediate-Band Solar Cells [J].

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[8] Effects of front InGaP layer thickness on solar cell characteristics in InP/InGaP quantum dot solar cells [J].

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Sugaya, Takeyoshi .

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[9] Design and characterization of InGaP-based InP quantum dot solar cells [J].

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Nagato, Yuki ;

Okano, Yoshinobu ;

Sugaya, Takeyoshi .

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[10] Characterization of InGaP Heterojunction Emitter Quantum Dot Solar Cells [J].

Bittner, Zachary S. ;

Forbes, David V. ;

Bailey, Christopher G. ;

Polly, Stephen J. ;

Slocum, Michael A. ;

Kerestes, Christopher ;

Hubbard, Seth M. .

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012, :3158-3161

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