Dielectric properties of BZT ceramics for microwave applications

High permittivity dielectric materials (epsilon(r) > 20) are used in mobile communications due to low dielectric loss in microwaves and millimeter waves, specific temperature dependence of the dielectric properties and high dielectric permittivity, which allows device miniaturization. Preparation of Ba(Zn1/3Ta2/3)O-3 ceramic materials (BZT) with optimal properties for applications requires special thermal treatments due to the difficult control of the cationic ordering. The samples were prepared by using solid-state reaction, doped with Eu2O3, ZrO2, Nb2O5, or Al2O3-Y2O3 and sintered at the following temperatures: 1400, 1500, 1550 degrees C for 2 or 3 hours. In order to improve the microwave properties, annealing treatments at 1410 degrees C for 10h or 30h were performed on ceramic samples. XRD was used for compositional and structural characterization. The XRD data allowed the study of the transition from the pseudo-cubic cell to the hexagonal cell. The dielectric properties were measured in the microwave range and were correlated with additives and structural properties. Sintering temperatures greater than 1500 degrees C are required for doped BZT compositions, in order to obtain high dielectric constant (epsilon(r) similar to 28) and high quality factor (Q = 10000 at 10 GHz).