Design consideration for the improved Class-D inverter topology

被引：6

作者：

Lee, BK ^{[1
]}

Suh, BS ^{[1
]}

Hyun, DS ^{[1
]}

机构：

[1] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 1998年 / 45卷 / 02期

关键词：

Class-D inverter; high-frequency resonant current stress; lossless capacitive snubber; overvoltage stress; RC snubber;

D O I：

10.1109/41.681220

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The characteristics and the superiority of the efficient snubber network for Class-D series resonant inverters are addressed in detail by comparison with conventional snubbers, i.e., the lossless capacitive snubber and the RC snubber, with respect to switching losses, overvoltage stresses, high-frequency resonant current stresses, and overall efficiency, Also, the optimal design scheme for it is considered and the analytical equations are derived in order to provide a straightforward and easy-to-design tool, The validity of the theoretical description is verified by testing on a 29-kHz MOSFET Class-D series resonant inverter rated at 1.2 kW.

引用

页码：217 / 227

页数：11

共 7 条

[1]

CANESIN CA, 1995, IEEE POWER ELECTRON, P1265, DOI 10.1109/PESC.1995.474976

[2] A 50-150 kHz half-bridge inverter for induction heating applications [J].

Kamli, M ;

Yamamoto, S ;

Abe, M .

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 1996, 43 (01) :163-172

[3] CLASS-D ZERO-VOLTAGE-SWITCHING INVERTER WITH ONLY ONE SHUNT CAPACITOR [J].

KAZIMIERCZUK, MK ;

SZARANIEC, W .

IEE PROCEEDINGS-B ELECTRIC POWER APPLICATIONS, 1992, 139 (05) :449-456

[4] CLASS-D VOLTAGE-SWITCHING MOSFET POWER-AMPLIFIER [J].

KAZIMIERCZUK, MK .

IEE PROCEEDINGS-B ELECTRIC POWER APPLICATIONS, 1991, 138 (06) :285-296

[5]

LEE BK, 1996, P APEC 96 C, P187

[6]

Mohan N., 1995, Power Electronics: Converters, Applications, and Design

[7]

Ogata K, 1990, MODERN CONTROL ENG

← 1 →