Thermodynamic descriptions of the Ga-Li system

被引：21
作者：
Yuan, WX
Wang, WJ
Song, YT
Chen, XL
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Univ Sci & Technol Beijing, Dept Chem, Beijing 100083, Peoples R China
来源：
SCRIPTA MATERIALIA | 2003年 / 48卷 / 08期
基金：
中国国家自然科学基金;
关键词：
CALPHAD; single crystal growth;
D O I：
10.1016/S1359-6462(02)00634-6
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The thermodynamic behavior of the Ga-Li system is analyzed using the calculation of phase diagram technique. The liquid phase is modeled with the Redlich-Kister equation. The ordered intermetallic compound GaLi is thermodynamically described by a two sublattice model. The other compounds are treated as stoichiometric compounds. A set of self-consistent thermodynamic parameters is obtained. (C) 2003 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1053 / 1059
页数：7
相关论文
共 24 条
  • [1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
    AMANO, H
    KITO, M
    HIRAMATSU, K
    AKASAKI, I
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2112 - L2114
  • [2] GaN single crystal growth using high-purity Na as a flux
    Aoki, M
    Yamane, H
    Shimada, M
    Sarayama, S
    DiSalvo, FJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 242 (1-2) : 70 - 76
  • [3] BUSHMANOV VD, 1981, ZH FIZ KHIM+, V55, P2951
  • [4] Davydov AV, 2001, PHYS STATUS SOLIDI A, V188, P407, DOI 10.1002/1521-396X(200111)188:1<407::AID-PSSA407>3.0.CO
  • [5] 2-P
  • [6] SGTE DATA FOR PURE ELEMENTS
    DINSDALE, AT
    [J]. CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 1991, 15 (04): : 317 - 425
  • [7] *GTT TECHN, 1998, GTT CHEMS HDB VERS 2
  • [8] Exciton region reflectance of homoepitaxial GaN layers
    Korona, KP
    Wysmolek, A
    Pakula, K
    Stepniewski, R
    Baranowski, JM
    Grzegory, I
    Lucznik, B
    Wroblewski, M
    Porowski, S
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (06) : 788 - 790
  • [9] FUNDAMENTAL ENERGY-GAP OF GAN FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA
    MONEMAR, B
    [J]. PHYSICAL REVIEW B, 1974, 10 (02): : 676 - 681
  • [10] The roles of structural imperfections in InGaN-Based blue light-emitting diodes and laser diodes
    Nakamura, S
    [J]. SCIENCE, 1998, 281 (5379) : 956 - 961
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