Light-matter coupling in imperfect quasi-two-dimensional Si/SiO2 photonic crystal

被引：6
作者：
Rumyantsev, Vladimir [1 ]
Fedorov, Stanislav [1 ]
Shtaerman, Esfir [1 ]
机构：
[1] NASU, Galkin Donetsk Inst Phys & Engn, UA-83114 Donetsk, Ukraine
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2010年 / 47卷 / 01期
关键词：
Photonic band gap; Quasi-two-dimensional Si/SiO2 striped system; Admixture strips; PROPAGATION; THICKNESS; SILICON;
D O I：
10.1016/j.spmi.2009.07.020
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The peculiarities of propagation of an electromagnetic excitation localized in a nonideal quasi-two-dimensional Si/SiO2 photonic crystal that constitutes a topologically ordered set of strips with a random number of defect strips is numerically simulated within the virtual crystal approximation. The defect strips differ from the basic strips (for an ideal periodic structure) in the composition. The peculiarities of the lowest photonic band gap dependence upon concentration of admixture strips are considered. The study carried out shows that optical characteristics of the nonideal Si/SiO2 striped film may vary due to the transformation of photon modes spectrum caused by the presence of admixture strips. (C) 2009 Elsevier Ltd. All rights reserved.
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收藏
页码：29 / 33
页数：5
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