Low temperature annealing effects on the stability of Bi nanowires

被引：5

作者：

Cassinelli, Marco ^{[1
,2
]}

Romanenko, Anton ^{[1
,3
]}

Reith, Heiko ^{[4
]}

Voelklein, Friedemann ^{[5
]}

Sigle, Wilfried ^{[6
]}

Trautmann, Christina ^{[1
,2
]}

Toimil-Molares, Maria Eugenia ^{[1
]}

机构：

[1] GSI Helmholtz Ctr Heavy Ion Res GmbH, Dept Mat Res, Planckstr 1, D-64291 Darmstadt, Germany

[2] Tech Univ Darmstadt, Mat & Geowissensch, Petersenstr 23, D-64287 Darmstadt, Germany

[3] Tech Univ Darmstadt, Inst Festkorperphys, Hsch Str 6, D-64289 Darmstadt, Germany

[4] IFW Dresden, Leibniz Inst Solid State & Mat Res, Helmholtzstr 20, D-01069 Dresden, Germany

[5] Univ Appl Sci Wiesbaden, Bruckweg 26, D-65428 Russelsheim, Germany

[6] Max Planck Inst Intelligence Syst, Heisenbergstr 1, D-70569 Stuttgart, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2016年 / 213卷 / 03期

关键词：

annealing; bismuth; nanowires; oxides; Raman spectroscopy; scanning electron microscopy; thermoelectrics; THERMOELECTRIC FIGURE; BI1-XSBX NANOWIRES; RAMAN-SCATTERING; MERIT; SIZE; TRANSITION; DEPOSITION; SPECTRA; MODES;

D O I：

10.1002/pssa.201532613

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To investigate the physical properties of Bi nanowires and to explore their possible implementation in thermoelectric devices, it is essential to understand their chemical and thermal stability in air both at room and moderate temperatures. In this work, we study the influence of low temperature annealing processes on the morphology and composition of the wires by scanning and transmission electron microscopy and by Raman spectroscopy, revealing the formation of a metal oxide phase. This oxidation process initiates an increase of the nanowires surface roughness at low annealing temperatures, while clear protuberances are formed at 250 degrees C. Difficulties to electrically contact single Bi nanowires, as well as the high resistance values measured and reported by other groups, are attributed to this oxidation process, which constitutes a clear challenge for the reliable characterization of Bi nanowires and the investigation of their performance. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：603 / 609

页数：7

共 59 条

[1] Infrared absorption in bismuth nanowires resulting from quantum confinement [J].