Current injection emission from a transparent p-n junction composed of p-SrCu2O2/n-ZnO

被引：545

作者：

Ohta, H

Kawamura, K

Orita, M

Hirano, M

Sarukura, N

Hosono, H

机构：

[1] Japan Sci & Technol Corp, ERATO, Hosono Transparent Electroact Mat, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

[2] Okazaki Natl Res Inst, Inst Mol Sci, Okazaki, Aichi 4448585, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.127015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ultraviolet light-emitting diode (LED) operating at room temperature was realized using a p-n heterojunction composed of transparent conductive oxides, p-SrCu2O2 and n-ZnO. Multilayered films prepared by a pulsed-laser deposition technique were processed by conventional photolithography with the aid of reactive ion etching to fabricate the LED device. A rather sharp emission band centered at 382 nm was generated when a forward bias voltage exceeding the turn-on voltage of 3 V was applied to the junction. The emission may be attributed to a transition associated with the electron-hole plasma of ZnO. (C) 2000 American Institute of Physics. [S0003-6951(00)02630-9].

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页码：475 / 477

页数：3

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