Current injection emission from a transparent p-n junction composed of p-SrCu2O2/n-ZnO

被引：545
作者：
Ohta, H
Kawamura, K
Orita, M
Hirano, M
Sarukura, N
Hosono, H
机构：
[1] Japan Sci & Technol Corp, ERATO, Hosono Transparent Electroact Mat, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
[2] Okazaki Natl Res Inst, Inst Mol Sci, Okazaki, Aichi 4448585, Japan
[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 04期
关键词：
D O I：
10.1063/1.127015
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An ultraviolet light-emitting diode (LED) operating at room temperature was realized using a p-n heterojunction composed of transparent conductive oxides, p-SrCu2O2 and n-ZnO. Multilayered films prepared by a pulsed-laser deposition technique were processed by conventional photolithography with the aid of reactive ion etching to fabricate the LED device. A rather sharp emission band centered at 382 nm was generated when a forward bias voltage exceeding the turn-on voltage of 3 V was applied to the junction. The emission may be attributed to a transition associated with the electron-hole plasma of ZnO. (C) 2000 American Institute of Physics. [S0003-6951(00)02630-9].
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页码：475 / 477
页数：3
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