Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

被引：2
作者：
Hu, Congyu [1 ]
Saito, Katsuhiko [1 ]
Tanaka, Tooru [1 ]
Guo, Qixin [1 ]
机构：
[1] Saga Univ, Synchrotron Light Applicat Ctr, Dept Elect & Elect Engn, Saga 8408502, Japan
来源：
JOURNAL OF SEMICONDUCTORS | 2019年 / 40卷 / 12期
关键词：
wide bandgap; gallium oxide; oxygen radical; pulsed laser deposition; plasma; THIN-FILMS; OPTICAL-PROPERTIES; BETA-GA2O3; FIELD;
D O I：
10.1088/1674-4926/40/12/122801
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition (PLD). An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency (RF) power on growth rate was investigated. A film grown with plasma assistance showed 2.7 times faster growth rate. X-ray diffraction and Raman spectroscopy analysis showed beta-Ga2O3 films grown with plasma assistance at 500 degrees C. The roughness of the films decreased when the RF power of plasma treatment increased. Transmittance of these films was at least 80% and showed sharp absorption edge at 250 nm which was consistent with data previously reported.
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页数：5
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