Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

被引：2
作者：
Hu, Congyu [1 ]
Saito, Katsuhiko [1 ]
Tanaka, Tooru [1 ]
Guo, Qixin [1 ]
机构：
[1] Saga Univ, Synchrotron Light Applicat Ctr, Dept Elect & Elect Engn, Saga 8408502, Japan
来源：
JOURNAL OF SEMICONDUCTORS | 2019年 / 40卷 / 12期
关键词：
wide bandgap; gallium oxide; oxygen radical; pulsed laser deposition; plasma; THIN-FILMS; OPTICAL-PROPERTIES; BETA-GA2O3; FIELD;
D O I：
10.1088/1674-4926/40/12/122801
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition (PLD). An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency (RF) power on growth rate was investigated. A film grown with plasma assistance showed 2.7 times faster growth rate. X-ray diffraction and Raman spectroscopy analysis showed beta-Ga2O3 films grown with plasma assistance at 500 degrees C. The roughness of the films decreased when the RF power of plasma treatment increased. Transmittance of these films was at least 80% and showed sharp absorption edge at 250 nm which was consistent with data previously reported.
引用
收藏
页数：5
相关论文
共 50 条
  • [31] Iron oxide thin films grown on (00l) sapphire substrate by pulsed-laser deposition
    Bejjit, C-E
    Roge, V.
    Cachoncinlle, C.
    Hebert, C.
    Perriere, J.
    Briand, E.
    Millon, E.
    THIN SOLID FILMS, 2022, 745
  • [32] Characterization of AlN Thin Films Grown by Pulsed Laser Deposition on Sapphire Substrate
    Jeong, Eun-Hee
    Chung, Jun-Ki
    Jung, Rae-Young
    Kim, Sung-Jin
    Park, Sang-Yeup
    JOURNAL OF THE KOREAN CERAMIC SOCIETY, 2013, 50 (06) : 551 - 556
  • [33] Uniformity of gallium doped zinc oxide thin film prepared by pulsed laser deposition
    Mitsugi, Fumiaki
    Umeda, Yoshihiro
    Sakai, Norihiro
    Ikegami, Tomoaki
    THIN SOLID FILMS, 2010, 518 (22) : 6334 - 6338
  • [34] Composition and bandgap control of AlxGa1-xN films synthesized by plasma-assisted pulsed laser deposition
    Cai, Hua
    Liang, Peipei
    Huebner, Rene
    Zhou, Shengqiang
    Li, Yanli
    Sun, Jian
    Xu, Ning
    Wu, Jiada
    JOURNAL OF MATERIALS CHEMISTRY C, 2015, 3 (20) : 5307 - 5315
  • [35] Particulate assisted growth of ZnO nanorods and microrods by pulsed laser deposition
    Premkumar, T.
    Manoravi, P.
    Panigrahi, K.
    Baskar, K.
    APPLIED SURFACE SCIENCE, 2009, 255 (15) : 6819 - 6822
  • [36] Influences of Substrate and Annealing on the Structural and Optical Properties and Photoluminescence of Nanocrystalline ZnO Films Prepared by Plasma Assisted Pulsed Laser Deposition
    Gao, K.
    Zhang, W.
    Sun, J.
    Xu, N.
    Ying, Z. F.
    Li, Q.
    Gan, J.
    Wu, J. D.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (44) : 19139 - 19144
  • [37] Structural and optical properties of manganese oxide thin films deposited by pulsed laser deposition at different substrate temperatures
    Jamil, H.
    Khaleeq-ur-Rahman, M.
    Dildar, I. M.
    Shaukat, Saima
    LASER PHYSICS, 2017, 27 (09)
  • [38] A comparative study of gadolinium gallium garnet growth by femtosecond and nanosecond pulsed laser deposition
    Darby, M. S. B.
    May-Smith, T. C.
    Eason, R. W.
    Donnelly, T.
    Lunney, J. G.
    Rogers, K. D.
    APPLIED SURFACE SCIENCE, 2008, 254 (11) : 3364 - 3369
  • [39] Fabrication of Gallium Nitride on Sapphire via Pulsed Laser Deposition under Different pressure Energy
    Cheng, Yu-Wen
    Wu, Hao-Yu
    Lin, Ching-Fuh
    2013 13TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2013, : 1058 - 1061
  • [40] Spectroscopic characterization of the plasmas formed during the deposition of ZnO and Al-doped ZnO films by plasma-assisted pulsed laser deposition
    Liang, Peipei
    Cai, Hua
    Yang, Xu
    Li, Hui
    Zhang, Wu
    Xu, Ning
    Sun, Jian
    Wu, Jiada
    SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 2016, 125 : 18 - 24
12345