Screening and engineering of colour centres in diamond

被引:74
作者
Luehmann, Tobias [1 ]
Raatz, Nicole [1 ]
John, Roger [1 ]
Lesik, Margarita [2 ,3 ]
Roediger, Jasper [4 ]
Portail, Marc [5 ]
Wildanger, Dominik [6 ]
Kleissler, Felix [7 ]
Nordlund, Kai [8 ,9 ]
Zaitsev, Alexander [10 ]
Roch, Jean-Francois [2 ,3 ]
Tallaire, Alexandre [11 ,12 ]
Meijer, Jan [1 ]
Pezzagna, Sebastien [1 ]
机构
[1] Univ Leipzig, Felix Bloch Inst Solid State Phys, Nucl Solid State Phys, Linnestr 5, D-04103 Leipzig, Germany
[2] Univ Paris Sud, CNRS, Lab Aime Cotton, F-91405 Orsay, France
[3] Ecole Normale Super, F-91405 Orsay, France
[4] Fraunhofer Heinrich Hertz Inst, Einsteinufer 37, D-10587 Berlin, Germany
[5] Ctr Rech Sur Heteroepitaxie & Applicat, Rue Bernard Gregory, F-06560 Valbonne, France
[6] Westfalenstr 3, D-34131 Kassel, Germany
[7] Max Planck Inst Biophys Chem, Dept NanoBiophoton, Fassberg 11, D-37077 Gottingen, Germany
[8] Univ Helsinki, Dept Phys, Helsinki, Finland
[9] Univ Helsinki, Helsinki Inst Phys, Helsinki, Finland
[10] CUNY Coll Staten Isl, 2800 Victory Blvd, Staten Isl, NY 10314 USA
[11] Univ Paris 13, Sorbonne Paris Cite, Lab Sci Proc & Mat, CNRS, F-93430 Villetaneuse, France
[12] IRCP Paris, 11 Rue Pierre & Marie Curie, F-75005 Paris, France
关键词
diamond; ion implantation; nitrogen-vacancy centre; ST1; centre; defect engineering; diffusion; ion channeling; NITROGEN-VACANCY CENTERS; SINGLE-PHOTON SOURCE; ROOM-TEMPERATURE; NATURAL DIAMOND; OPTICAL-CENTERS; NV-CENTER; SPIN; PHOSPHORUS; MICROSCOPY; DIFFUSION;
D O I
10.1088/1361-6463/aadfab
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a high throughput and systematic method for the screening of colour centres in diamond with the aim of searching for and reproducibly creating new optical centres down to the single defect level, potentially of interest for a wide range of diamond-based quantum applications. The screening method presented here should, moreover, help to identify some already indexed defects among hundreds in diamond (Zaitsev 2001 Optical Properties of Diamond (Berlin: Springer)) but also some promising defects of a still unknown nature, such as the recently discovered ST1 centre (Lee et al 2013 Nat. Nanotechnol. 8 487; John et al 2017 New J. Phys. 19 053008). We use ion implantation in a systematic manner to implant several chemical elements. Ion implantation has the advantage of addressing single atoms inside the bulk with defined depth and high lateral resolution, but the disadvantage of producing intrinsic defects. The implanted samples are annealed in vacuum at different temperatures (between 600 degrees C and 1600 degrees C with 200 degrees C steps) and fully characterised at each step in order to follow the evolution of the defects: formation, dissociation, diffusion, re-formation and charge state, at the ensemble level and, if possible, at the single centre level. We review the unavoidable ion implantation defects (such as the GR1 and 3H centres), discuss ion channeling and thermal annealing and estimate the diffusion of the vacancies, nitrogen and hydrogen. We use different characterisation methods best suited for our study (from widefield fluorescence down to subdiffraction optical imaging of single centres) and discuss reproducibility issues due to diamond and defect inhomogeneities. Nitrogen is also implanted for reference, taking advantage of the considerable knowledge on NV centres as a versatile sensor in order to retrieve or deduce the conditions and local environment in which the different implanted chemical elements are embedded. We show here the preliminary promising results of a long-term study and focus on the elements O, Mg, Ca, F and P from which fluorescent centres were found.
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页数:24
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