Suppression of oxygen impurity incorporation into silicon films prepared from surface-wave excited H2/SiH4 plasma

被引：11
|
作者：
Somiya, S [1 ]
Toyoda, H [1 ]
Hotta, Y [1 ]
Sugai, H [1 ]
机构：
[1] Nagoya Univ, Dept Elect Engn & Comp Sci, Sch Engn, Chikusa Ku, Nagaoka, Niigata 4648603, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 11A期
关键词：
surface-wave excited plasma; polycrystalline silicon; oxygen impurity; quartz; alumina;
D O I：
10.1143/JJAP.43.7696
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Surface-wave plasma (SWP) in SiH4 highly diluted with H-2 at 2.45 GHz and 2 kW is applied to the deposition of polycrystallitie silicon thin films. When a quartz window is used as a microwave injection for discharge, an oxygen impurity level of up to similar to1.5% is observed in the deposited films. Mass spectrometry reveals that the origin of oxygen is water, i.e., the chemical erosion product of the quartz window (SiO2) caused by many hydrogen radicals in high-density plasma. By replacing the quartz window with an alumina (Al2O3) window, oxygen impurity level is markedly reduced, along with the increase in the grain size of films.
引用
收藏
页码：7696 / 7700
页数：5
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