Reliability scaling in deep sub-micron MOSFETs

被引：0
|
作者：
Horiuchi, T [1 ]
Ito, H [1 ]
Kimizuka, N [1 ]
机构：
[1] NEC CORP LTD,ULSI,DEVICE DEV LABS,SAGAMIHARA,KANAGAWA 229,JAPAN
来源：
MICROELECTRONIC DEVICE AND MULTILEVEL INTERCONNECTION TECHNOLOGY II | 1996年 / 2875卷
关键词：
scaling; hot-carrier; oxide-breakdown; reliability; MOSFET;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：108 / 117
页数：10
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