Enhanced luminescence of GdTaO4:Eu3+ thin-film phosphors by K doping

被引：23

作者：

Liu, Xiaolin ^{[1
]}

Xui, Xin ^{[1
]}

Gu, Mu ^{[1
]}

Xiao, Lihong ^{[1
]}

Han, Kun ^{[1
]}

Zhang, Rui ^{[1
]}

机构：

[1] Tongji Univ, Pohl Inst Solid State Phys, Lab Waves & Microstruct Mat, Shanghai 200092, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 09期

基金：

上海市自然科学基金;

关键词：

K doped GdTaO4 : Eu3+; thin films; sol-gel process; luminescence;

D O I：

10.1016/j.apsusc.2006.09.060

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of K+ ions on GdTaO4:Eu3+ thin-film phosphors was investigated in order to improve their luminescent properties. The GdTaO4:Euo(0.1), K-x thin films were synthesized by sol-gel process, and characterized through measuring their microstructure and luminescence. The results indicated that photoluminescence (PL) intensity of GdTaO4:Eu3+ film was improved remarkably by K doping. There were two maxima in the curve of PL intensity against K+ dopant concentration, where one was improved up to 2.1 times at x = 0.001 and the other was enhanced up to 2.7 times at x = 0.05. The first maximum was regarded as the alteration of the local environment surrounding the Eu3+ activator by incorporation of K+ ions, and the second maximum was due to the flux effect. Additionally, the luminescence increased with the increase of firing temperature from 800 degrees C to 1200 degrees C. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：4344 / 4347

页数：4

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