Simple colloidal lithography method to fabricate large-area moth-eye antireflective structures on Si, Ge, and GaAs for IR applications

被引：29

作者：

Gonzalez, Federico Lora ^{[1
]}

Chan, Lesley ^{[1
]}

Berry, Alex ^{[1
]}

Morse, Daniel E. ^{[2
]}

Gordon, Michael J. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mol Cellular & Dev Biol, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2014年 / 32卷 / 05期

基金：

美国国家科学基金会;

关键词：

BROAD-BAND; SYSTEMS; ARRAYS;

D O I：

10.1116/1.4895966

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-step colloidal lithography process (Langmuir-Blodgett dip coating + reactive ion etching) was developed to fabricate single and double-sided moth-eye structures in Si, Ge, and GaAs for antireflection applications in the IR. Large increases in transmittance were obtained in all three material platforms (up to 97% single-side and 91% absolute transmittance) over the lambda = 4-20+ mu m region. Effective medium theory and the transfer matrix method were used to predict IR optical response of moth-eye substrates as well as investigate the effect of protuberance shape on antireflectance behavior. Overall, it is demonstrated that colloidal lithography and etching provide an easy and generic way to synthesize moth-eyes in different IR material platforms. (C) 2014 American Vacuum Society.

引用

页数：5

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