Controlling the electronic interface properties of AlOx/SrTiO3 heterostructures

被引：12

作者：

Leikert, Berengar ^{[1
]}

Gabel, Judith ^{[1
,2
]}

Schmitt, Matthias ^{[1
]}

Stuebinger, Martin ^{[1
]}

Scheiderer, Philipp ^{[1
]}

Veyrat, Louis ^{[1
]}

Lee, Tien-Lin ^{[2
]}

Sing, Michael ^{[1
]}

Claessen, Ralph ^{[1
]}

机构：

[1] Univ Wurzburg, Phys Inst & Wurzburg Dresden Cluster Excellence C, D-97074 Wurzburg, Germany

[2] Diamond Light Source, Harwell Sci & Innovat Campus, Didcot OX11 0DE, Oxon, England

来源：

PHYSICAL REVIEW MATERIALS | 2021年 / 5卷 / 06期

关键词：

SRTIO3; SURFACES; LIQUID; GAS;

D O I：

10.1103/PhysRevMaterials.5.065003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Depositing disordered Al on top of SrTiO3 is a cheap and easy way to create a two-dimensional electron system in the SrTiO3 surface layers. To facilitate future device applications, we passivate the heterostructure by a disordered LaAlO3 capping layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth.

引用

页数：8

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