Effects of Plasma Pretreatment on ZnO Deposition by SILAR on SiO2, HfO2, and Glass Substrates

被引:2
作者
Higgins, Marissa [1 ]
Pintor-Monroy, Maria Isabel [2 ]
Quevedo-Lopez, Manuel [2 ]
机构
[1] Univ Texas Dallas, Dept Chem & Biochem, 800 W Campbell Rd, Richardson, TX 75080 USA
[2] Univ Texas Dallas, Dept Mat Sci & Engn, 800 W Campbell Rd, Richardson, TX 75080 USA
关键词
oxygen plasma; plasma pretreatments; successive ionic layer adsorption and reaction; surface treatments; zinc oxide; IONIC LAYER ADSORPTION; N-TYPE ZNO; THIN-FILMS; OPTICAL-PROPERTIES; SCHOTTKY CONTACTS; SURFACE-TREATMENT; SAPPHIRE; TEMPERATURE;
D O I
10.1002/crat.201800039
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Zinc oxide (ZnO) films are deposited onto glass, silicon oxide, and hafnium oxide substrates via the successive ionic layer adsorption and reaction (SILAR) method. The substrates are subjected to an oxygen plasma treatment prior to the deposition to increase the hydrophilic character of the film surface and improve the morphological and structural properties of the resulting ZnO films. Crystallinity, surface morphology, and thickness of the films with and without the plasma treatment are thoroughly evaluated by multiple characterization techniques. The oxygen plasma treatment increases the substrate's surface roughness significantly which results in an increase in the nucleation sites. The plasma treatment yields thicker films in all the substrates compared with substrates without the plasma treatment. The thickness of the ZnO deposited on glass substrates increases as the rinsing time increases, while the opposite is observed for films deposited on both silicon and hafnium oxide substrates. The higher porosity of the ZnO films grown on silicon dioxide and hafnium dioxide substrates leads to a higher surface area that increases the removal of the deposited ZnO on these substrates with the rinsing during the SILAR deposition, resulting in an overall thickness reduction of the film.
引用
收藏
页数:6
相关论文
共 35 条
[1]   Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].
Chen, YF ;
Bagnall, DM ;
Koh, HJ ;
Park, KT ;
Hiraga, K ;
Zhu, ZQ ;
Yao, T .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918
[2]   Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(000(1)over-bar) [J].
Coppa, BJ ;
Davis, RF ;
Nemanich, RJ .
APPLIED PHYSICS LETTERS, 2003, 82 (03) :400-402
[3]  
Dean J. A., 1992, Lange's Handbook of Chemistry
[4]   Synthesis and optical properties of ZnO nanocluster porous films deposited by modified SILAR method [J].
Gao, XD ;
Li, XM ;
Yu, WD .
APPLIED SURFACE SCIENCE, 2004, 229 (1-4) :275-281
[5]   Improved Pt/Au and W/Pt/Au Schottky contacts on n-type ZnO using ozone cleaning [J].
Ip, K ;
Gila, BP ;
Onstine, AH ;
Lambers, ES ;
Heo, YW ;
Baik, KH ;
Norton, DP ;
Pearton, SJ ;
Kim, S ;
LaRoche, JR ;
Ren, F .
APPLIED PHYSICS LETTERS, 2004, 84 (25) :5133-5135
[6]  
Jagadish C., 2011, Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties, and Applications
[7]   Sol-gel synthesis of ZnO thin films [J].
Kamalasanan, MN ;
Chandra, S .
THIN SOLID FILMS, 1996, 288 (1-2) :112-115
[8]   Formation of a ZnO2 layer on the surface of single crystal ZnO substrates with oxygen atoms by hydrogen peroxide treatment [J].
Kashiwaba, Y. ;
Abe, T. ;
Nakagawa, A. ;
Niikura, I. ;
Kashiwaba, Y. ;
Daibo, M. ;
Fujiwara, T. ;
Osada, H. .
JOURNAL OF APPLIED PHYSICS, 2013, 113 (11)
[9]  
Kim SH, 2005, APPL PHYS LETT, V86, DOI [10.1063/1.1862772, 10.1063/1.1839285]
[10]   Preparation of undoped and indium doped ZnO thin films by pulsed laser deposition method [J].
Kotlyarchuk, B ;
Savchuk, V ;
Oszwaldowski, M .
CRYSTAL RESEARCH AND TECHNOLOGY, 2005, 40 (12) :1118-1123