Indium-Tin-Oxide Thin-Film Transistors With In Situ Anodized Ta2O5 Passivation Layer

被引：13

作者：

Le, Yong ^{[1
]}

Shao, Yang ^{[1
]}

Xiao, Xiang ^{[1
]}

Xu, Xin ^{[1
]}

Zhang, Shengdong ^{[1
,2
]}

机构：

[1] Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China

[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Indium tin oxide (ITO); thin-film transistors (TFTs); anodization; back channel passivation; STABILITY;

D O I：

10.1109/LED.2016.2548785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An in situ passivation process for the fabrication of high-performance indium-tin-oxide thin-film transistors (ITO TFTs) is demonstrated, in which a localized anodic oxidization (anodization) technique is used to convert the metal Ta film on a channel layer into a Ta2O5 film to form a channel passivation layer. At the same time, the high conductive ITO layer is modulated into an appropriate active layer due to filling of oxygen vacancies during the anodization. The fabricated ITO TFT shows a high mobility of 56.1 cm(2)/Vs, a proper threshold voltage of 1.7 V, a steep subthreshold slope of 0.14 V/decade, and a high ON/OFF current ratio exceeding 10(9). A good electrical stability under gate-bias stress is also observed with the ITO TFTs.

引用

页码：603 / 606

页数：4

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