Understanding the dynamics of the growth of nanowires by the vapor-liquid-solid (VLS) process is essential in order to relate the properties of the wire to their processing conditions. A theory for VLS growth is developed that incorporates the surface energy of the solid-liquid, liquid-vapor, and solid-vapor interfaces, allows for supersaturation of growth material in the droplet, and employs contact-line conditions. We predict the profile of catalyst concentration in the droplet, the degree of supersaturation, and the modification to the shape of the solid-liquid interface due to growth, as functions of the material properties and process parameters. Under typical experimental conditions the interface deflection due to growth is predicted to be practically zero. We also find that the growth rate of the wire inherits the same dependence on diameter as the flux of growth material at the liquid-vapor interface; thus, if we assume that the flux is independent of radius, we obtain a growth rate that is also independent of radius. To make a prediction about the actual variation with diameter requires a detailed knowledge of the decomposition kinetics at the liquid-vapor interface. (c) 2007 American Institute of Physics.
机构:
Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, IndiaIndian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
Shakthivel, Dhayalan
Raghavan, Srinivasan
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Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
Indian Inst Sci, Ctr Nanosci & Engn, Bangalore 560012, Karnataka, IndiaIndian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
机构:
Matsushita Elect Ind Co Ltd, Adv Devices Dev Ctr, Osaka 5708501, Japan
Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, JapanMatsushita Elect Ind Co Ltd, Adv Devices Dev Ctr, Osaka 5708501, Japan
Kawashima, Takahiro
Mizutani, Tatsunori
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机构:Matsushita Elect Ind Co Ltd, Adv Devices Dev Ctr, Osaka 5708501, Japan
Mizutani, Tatsunori
Masuda, Hiroyuki
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机构:Matsushita Elect Ind Co Ltd, Adv Devices Dev Ctr, Osaka 5708501, Japan
Masuda, Hiroyuki
Saitoh, Tohru
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机构:Matsushita Elect Ind Co Ltd, Adv Devices Dev Ctr, Osaka 5708501, Japan
Saitoh, Tohru
Fujii, Minoru
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Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, JapanMatsushita Elect Ind Co Ltd, Adv Devices Dev Ctr, Osaka 5708501, Japan
机构:
Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram Sand Fine Proc, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram Sand Fine Proc, Beijing 100084, Peoples R China
Wang, Huatao
Xie, Zhipeng
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Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram Sand Fine Proc, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram Sand Fine Proc, Beijing 100084, Peoples R China
Xie, Zhipeng
Yang, Weiyou
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Ningbo Univ Technol, Inst Mat, Ningbo 315016, Zhejiang, Peoples R ChinaTsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram Sand Fine Proc, Beijing 100084, Peoples R China
Yang, Weiyou
Fang, Jiyu
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Univ Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USATsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram Sand Fine Proc, Beijing 100084, Peoples R China
Fang, Jiyu
An, Linan
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Univ Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USATsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram Sand Fine Proc, Beijing 100084, Peoples R China
机构:
Anna Univ, Dept Chem, Inst Catalysis & Petr Technol, Chennai 600025, Tamil Nadu, IndiaAnna Univ, Dept Chem, Inst Catalysis & Petr Technol, Chennai 600025, Tamil Nadu, India
Rajesh, John Anthuvan
Pandurangan, Arumugam
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Anna Univ, Dept Chem, Inst Catalysis & Petr Technol, Chennai 600025, Tamil Nadu, IndiaAnna Univ, Dept Chem, Inst Catalysis & Petr Technol, Chennai 600025, Tamil Nadu, India