AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor on 4 in. silicon substrate for high breakdown characteristics

被引：46

作者：

Selvaraj, S. Lawrence ^{[1
]}

Ito, Tsuneo ^{[1
]}

Terada, Yutaka ^{[1
]}

Egawa, Takashi ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 17期

关键词：

D O I：

10.1063/1.2730751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) grown on 4 in. silicon substrate have been demonstrated. The heterostructure exhibited high sheet carrier density with small surface roughness. AlN/AlGaN/GaN MIS-HEMT exhibited maximum drain current density (I-DS max) of 361 mA/mm and maximum extrinsic transconductance (g(m max)) of 152 mS/mm. Due to the increase of sheet carrier density, the 2DEG channel shifts towards the AlGaN/GaN interface resulting in positive shift of the threshold voltage (-2.6 to -1.8 V). Two orders of magnitude low gate leakage current and reduced drain current collapse with high breakdown voltage of 230 V have been observed on AlN/AlGaN/GaN MIS-HEMTs. (c) 2007 American Institute of Physics.

引用

页数：3

共 11 条

[1] Low interface state density AlN/GaN MISFETs [J].

Alekseev, E ;

Eisenbach, A ;

Pavlidis, D .

ELECTRONICS LETTERS, 1999, 35 (24) :2145-2146

[2] Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors [J].

Antoszewski, J ;

Gracey, M ;

Dell, JM ;

Faraone, L ;

Fisher, TA ;

Parish, G ;

Wu, YF ;

Mishra, UK .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (08) :3900-3904

[3] Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H .

SOLID-STATE ELECTRONICS, 2005, 49 (10) :1632-1638

[4] Current collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors with and without surface passivation [J].

Arulkumaran, S ;

Hibino, T ;

Egawa, T ;

Ishikawa, H .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5745-5747

[5] Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors [J].

Hasegawa, H ;

Inagaki, T ;

Ootomo, S ;

Hashizume, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04) :1844-1855

[6] Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition [J].

Hashizume, T ;

Alekseev, E ;

Pavlidis, D ;

Boutros, KS ;

Redwing, J .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) :1983-1986

[7] AlN/GaN insulated-gate HFETs using Cat-CVD SiN [J].

Higashiwaki, Masataka ;

Mimura, Takashi ;

Matsui, Toshiaki .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (09) :719-721

[8] Defect structures of AIN on sapphire(0001) grown by metalorganic vapor-phase epitaxy with different preflow sources [J].

Kawaguchi, K ;

Kuramata, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (46-49) :L1400-L1402

[9] Enhancement of drain current density by inserting 3 nm Al layer in the gate of AlGaN/GaN high-electron-mobility transistors on 4 in. silicon [J].

Selvaraj, S. Lawrence ;

Egawa, Takashi .

APPLIED PHYSICS LETTERS, 2006, 89 (19)

[10] GAN, AIN, AND INN - A REVIEW [J].

STRITE, S ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1237-1266

← 1 2 →