AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor on 4 in. silicon substrate for high breakdown characteristics

被引：46

作者：

Selvaraj, S. Lawrence ^{[1
]}

Ito, Tsuneo ^{[1
]}

Terada, Yutaka ^{[1
]}

Egawa, Takashi ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 17期

关键词：

D O I：

10.1063/1.2730751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) grown on 4 in. silicon substrate have been demonstrated. The heterostructure exhibited high sheet carrier density with small surface roughness. AlN/AlGaN/GaN MIS-HEMT exhibited maximum drain current density (I-DS max) of 361 mA/mm and maximum extrinsic transconductance (g(m max)) of 152 mS/mm. Due to the increase of sheet carrier density, the 2DEG channel shifts towards the AlGaN/GaN interface resulting in positive shift of the threshold voltage (-2.6 to -1.8 V). Two orders of magnitude low gate leakage current and reduced drain current collapse with high breakdown voltage of 230 V have been observed on AlN/AlGaN/GaN MIS-HEMTs. (c) 2007 American Institute of Physics.

引用

页数：3

共 11 条

[1] Low interface state density AlN/GaN MISFETs
Alekseev, E
Eisenbach, A
Pavlidis, D
[J]. ELECTRONICS LETTERS, 1999, 35 (24) : 2145 - 2146
[2] Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors
Antoszewski, J
Gracey, M
Dell, JM
Faraone, L
Fisher, TA
Parish, G
Wu, YF
Mishra, UK
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (08) : 3900 - 3904
[3] Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates
Arulkumaran, S
Egawa, T
Ishikawa, H
[J]. SOLID-STATE ELECTRONICS, 2005, 49 (10) : 1632 - 1638
[4] Current collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors with and without surface passivation
Arulkumaran, S
Hibino, T
Egawa, T
Ishikawa, H
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (23) : 5745 - 5747
[5] Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
Hasegawa, H
Inagaki, T
Ootomo, S
Hashizume, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1844 - 1855
[6] Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
Hashizume, T
Alekseev, E
Pavlidis, D
Boutros, KS
Redwing, J
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) : 1983 - 1986
[7] AlN/GaN insulated-gate HFETs using Cat-CVD SiN
Higashiwaki, Masataka
Mimura, Takashi
Matsui, Toshiaki
[J]. IEEE ELECTRON DEVICE LETTERS, 2006, 27 (09) : 719 - 721
[8] Defect structures of AIN on sapphire(0001) grown by metalorganic vapor-phase epitaxy with different preflow sources
Kawaguchi, K
Kuramata, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (46-49): : L1400 - L1402
[9] Enhancement of drain current density by inserting 3 nm Al layer in the gate of AlGaN/GaN high-electron-mobility transistors on 4 in. silicon
Selvaraj, S. Lawrence
Egawa, Takashi
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (19)
[10] GAN, AIN, AND INN - A REVIEW
STRITE, S
MORKOC, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1237 - 1266

← 1 2 →