Novel InGaN mesoporous grown by PA-MBE

被引：5

作者：

Ramizy, Asmiet ^{[1
,2
]}

Abud, Saleh H. ^{[2
]}

Hussein, A. S. ^{[3
]}

Hassan, Z. ^{[2
]}

Yam, F. K. ^{[2
]}

Chin, C. W. ^{[2
]}

机构：

[1] Anbar Univ, Coll Sci, Dept Phys, Anbar, Iraq

[2] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol NOR Lab, George Town 11800, Malaysia

[3] Univ Baghdad, Coll Engn, Energy Engn Dept, Baghdad, Iraq

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 29卷

关键词：

PA-MBE; XRD; SEM; Porous InGaN; GAN;

D O I：

10.1016/j.mssp.2013.10.032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study involves the synthesis of Porous ln(x)Ga(l) N-x/GaN/AIN on Si (111) subatrate using an electrochemical etching technique based on plasma-assisted molecular beam epitaxy. The structural and optical properties of the as-grown and porous films were subsequently investigated. The X-ray diffraction measurements showed that the In(x)Gai(1-x)N/GaN/AIN was epitaxially grown on Si substrate. Using the Vegard's law, a high (0.30) In-mole fraction was obtained. The Scanning electron microscopy images revealed that the synthesis process enhanced the surface morphology of the Si (111) subatrate. Micro-photoluminescence spectra displayed sharp and intense peaks at 364 nm with relatively low yellow emission band, indicating good optical quality. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：102 / 105

页数：4

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