Controlling impurity distributions in crystalline Si for solar cells by using artificial designed defects

被引：6

作者：

Hayama, Yusuke ^{[1
]}

Takahashi, Isao ^{[1
]}

Usami, Noritaka ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2017年 / 468卷

关键词：

Defects; Impurities; Solar cells; Semiconducting silicon; Industrial crystallization; Diffusion; MULTICRYSTALLINE SILICON; DIRECTIONAL SOLIDIFICATION; METAL IMPURITIES; WAFERS; SEED; IRON;

D O I：

10.1016/j.jcrysgro.2016.12.092

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the controlling of iron impurity distributions in Si by using artificial designed defects. We utilized Si wafers, which were designed to have high density of localized dislocations and high-quality region, for measurement of the interstitial iron concentration and total iron amount. It is suggested that interstitial irons can be accumulated at high density of dislocations by annealing at 600 degrees C. In addition, interstitial iron concentrations were decreased by slow cooling from 800 degrees C to 400 degrees C. These results show that a large number of interstitial irons are precipitated at high density of dislocations by annealing. Therefore, it is considered that impurity distribution can be controlled by using artificial designed defects under certain annealing condition.

引用

页码：610 / 613

页数：4

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