共 27 条
[21]
Graphene oxide modified PEDOT:PSS as an efficient hole transport layer for enhanced performance of hybrid silicon solar cells
[J].
Sharma, Ruchi K.
;
Srivastava, Avritti
;
Kumari, Premshila
;
Sharma, Deepak
;
Tawale, J. S.
;
Agrawal, Ved Varun
;
Singh, Bhanu Pratap
;
Prathap, Pathi
;
Srivastava, Sanjay K.
.
SURFACES AND INTERFACES,
2023, 36

论文数: 引用数:
h-index:
机构:

Srivastava, Avritti
论文数: 0 引用数: 0
h-index: 0
机构:
CSIR Natl Phys Lab, Adv Mat & Device Metrol Div, Photovolta Metrol Sect, New Delhi 110012, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India CSIR Natl Phys Lab, Adv Mat & Device Metrol Div, Photovolta Metrol Sect, New Delhi 110012, India

Kumari, Premshila
论文数: 0 引用数: 0
h-index: 0
机构:
CSIR Natl Phys Lab, Adv Mat & Device Metrol Div, Photovolta Metrol Sect, New Delhi 110012, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India CSIR Natl Phys Lab, Adv Mat & Device Metrol Div, Photovolta Metrol Sect, New Delhi 110012, India

论文数: 引用数:
h-index:
机构:

Tawale, J. S.
论文数: 0 引用数: 0
h-index: 0
机构:
CSIR Natl Phys Lab, Indian Reference Mat Div, New Delhi 110012, India CSIR Natl Phys Lab, Adv Mat & Device Metrol Div, Photovolta Metrol Sect, New Delhi 110012, India

Agrawal, Ved Varun
论文数: 0 引用数: 0
h-index: 0
机构:
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
CSIR Natl Phys Lab, Biomed Instrumentat Sect, New Delhi 110012, India CSIR Natl Phys Lab, Adv Mat & Device Metrol Div, Photovolta Metrol Sect, New Delhi 110012, India

Singh, Bhanu Pratap
论文数: 0 引用数: 0
h-index: 0
机构:
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
CSIR Natl Phys Lab, Adv Carbon Prod & Metrol, New Delhi 110012, India CSIR Natl Phys Lab, Adv Mat & Device Metrol Div, Photovolta Metrol Sect, New Delhi 110012, India

Prathap, Pathi
论文数: 0 引用数: 0
h-index: 0
机构:
CSIR Natl Phys Lab, Adv Mat & Device Metrol Div, Photovolta Metrol Sect, New Delhi 110012, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India CSIR Natl Phys Lab, Adv Mat & Device Metrol Div, Photovolta Metrol Sect, New Delhi 110012, India

Srivastava, Sanjay K.
论文数: 0 引用数: 0
h-index: 0
机构:
CSIR Natl Phys Lab, Adv Mat & Device Metrol Div, Photovolta Metrol Sect, New Delhi 110012, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India CSIR Natl Phys Lab, Adv Mat & Device Metrol Div, Photovolta Metrol Sect, New Delhi 110012, India
[22]
Impact of an annealing atmosphere on band-alignment of a plasma-enhanced atomic layer deposition-grown Ga2O3/SiC heterojunction
[J].
Shen, Yi
;
Wang, An-Feng
;
Ma, Hong-Ping
;
Qi, Xin
;
Yuan, Qilong
;
Yang, Mingyang
;
Qiu, Mengting
;
Zhang, Bingxue
;
Jiang, Nan
;
Zhang, Qingchun Jon
.
MATERIALS TODAY PHYSICS,
2024, 49

Shen, Yi
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China
Fudan Univ, Shanghai Res Ctr Silicon Carbide Power Devices Eng, Shanghai 200433, Peoples R China
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Adv Marine Mat, Ningbo 315201, Peoples R China Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China

Wang, An-Feng
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China
Fudan Univ, Shanghai Res Ctr Silicon Carbide Power Devices Eng, Shanghai 200433, Peoples R China Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China

Ma, Hong-Ping
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China
Fudan Univ, Shanghai Res Ctr Silicon Carbide Power Devices Eng, Shanghai 200433, Peoples R China
Res Inst Fudan Univ Ningbo, Inst Wide Bandgap Semicond Mat & Devices, Res Inst, Zhejiang 315327, Peoples R China Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China

Qi, Xin
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China
Fudan Univ, Shanghai Res Ctr Silicon Carbide Power Devices Eng, Shanghai 200433, Peoples R China Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China

Yuan, Qilong
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Adv Marine Mat, Ningbo 315201, Peoples R China Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China

Yang, Mingyang
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Adv Marine Mat, Ningbo 315201, Peoples R China Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China

Qiu, Mengting
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Adv Marine Mat, Ningbo 315201, Peoples R China Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China

Zhang, Bingxue
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn NIMTE, Publ Technol Ctr, Ningbo 315201, Peoples R China Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China

Jiang, Nan
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Adv Marine Mat, Ningbo 315201, Peoples R China Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China

Zhang, Qingchun Jon
论文数: 0 引用数: 0
h-index: 0
机构:
Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China
Fudan Univ, Shanghai Res Ctr Silicon Carbide Power Devices Eng, Shanghai 200433, Peoples R China
Res Inst Fudan Univ Ningbo, Inst Wide Bandgap Semicond Mat & Devices, Res Inst, Zhejiang 315327, Peoples R China Fudan Univ, Inst Wide Bandgap Semicond & Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China
[23]
Impact of Silicon Wafer Surface Treatment on the Morphology of GaP Layers Produced by Plasma Enhanced Atomic Layer Deposition
[J].
Uvarov, A. V.
;
Sharov, V. A.
;
Kudryashov, D. A.
;
Gudovskikh, A. S.
.
SEMICONDUCTORS,
2023, 57 (09)
:415-422

Uvarov, A. V.
论文数: 0 引用数: 0
h-index: 0
机构:
St Petersburg Natl Res Acad Univ, Russian Acad Sci, Alferov Fed State Budgetary Inst Higher Educ & Sci, Khlopin Str 8-3-A, St Petersburg 194021, Russia St Petersburg Natl Res Acad Univ, Russian Acad Sci, Alferov Fed State Budgetary Inst Higher Educ & Sci, Khlopin Str 8-3-A, St Petersburg 194021, Russia

Sharov, V. A.
论文数: 0 引用数: 0
h-index: 0
机构:
St Petersburg Natl Res Acad Univ, Russian Acad Sci, Alferov Fed State Budgetary Inst Higher Educ & Sci, Khlopin Str 8-3-A, St Petersburg 194021, Russia
Ioffe Inst, St Petersburg 194021, Russia St Petersburg Natl Res Acad Univ, Russian Acad Sci, Alferov Fed State Budgetary Inst Higher Educ & Sci, Khlopin Str 8-3-A, St Petersburg 194021, Russia

Kudryashov, D. A.
论文数: 0 引用数: 0
h-index: 0
机构:
St Petersburg Natl Res Acad Univ, Russian Acad Sci, Alferov Fed State Budgetary Inst Higher Educ & Sci, Khlopin Str 8-3-A, St Petersburg 194021, Russia St Petersburg Natl Res Acad Univ, Russian Acad Sci, Alferov Fed State Budgetary Inst Higher Educ & Sci, Khlopin Str 8-3-A, St Petersburg 194021, Russia

Gudovskikh, A. S.
论文数: 0 引用数: 0
h-index: 0
机构:
St Petersburg Natl Res Acad Univ, Russian Acad Sci, Alferov Fed State Budgetary Inst Higher Educ & Sci, Khlopin Str 8-3-A, St Petersburg 194021, Russia
St Petersburg State Electrotech Univ LETI, St Petersburg 197376, Russia St Petersburg Natl Res Acad Univ, Russian Acad Sci, Alferov Fed State Budgetary Inst Higher Educ & Sci, Khlopin Str 8-3-A, St Petersburg 194021, Russia
[24]
Significant improvement in the photovoltaic stability of bulk heterojunction organic solar cells by the molecular level interaction of graphene oxide with a PEDOT: PSS composite hole transport layer
[J].
Hilal, Muhammad
;
Han, Jeong In
.
SOLAR ENERGY,
2018, 167
:24-34

Hilal, Muhammad
论文数: 0 引用数: 0
h-index: 0
机构:
Dongguk Univ Seoul, Dept Chem & Biochem Engn, Seoul 04620, South Korea Dongguk Univ Seoul, Dept Chem & Biochem Engn, Seoul 04620, South Korea

Han, Jeong In
论文数: 0 引用数: 0
h-index: 0
机构:
Dongguk Univ Seoul, Dept Chem & Biochem Engn, Seoul 04620, South Korea Dongguk Univ Seoul, Dept Chem & Biochem Engn, Seoul 04620, South Korea
[25]
Conformal MoS2/Silicon Nanowire Array Heterojunction with Enhanced Light Trapping and Effective Interface Passivation for Ultraweak Infrared Light Detection
[J].
Mao, Jie
;
Zhang, Bingchang
;
Shi, Yihao
;
Wu, Xiaofeng
;
He, Yuanyuan
;
Wu, Di
;
Jie, Jiansheng
;
Lee, Chun-Sing
;
Zhang, Xiaohong
.
ADVANCED FUNCTIONAL MATERIALS,
2022, 32 (11)

Mao, Jie
论文数: 0 引用数: 0
h-index: 0
机构:
Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China

Zhang, Bingchang
论文数: 0 引用数: 0
h-index: 0
机构:
Soochow Univ, Educ Minist China, Key Lab Modern Opt Technol, Sch Optoelect Sci & Engn,Key Lab Adv Opt Mfg Tech, Suzhou 215123, Jiangsu, Peoples R China Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China

Shi, Yihao
论文数: 0 引用数: 0
h-index: 0
机构:
Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China

Wu, Xiaofeng
论文数: 0 引用数: 0
h-index: 0
机构:
Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China

He, Yuanyuan
论文数: 0 引用数: 0
h-index: 0
机构:
Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China

Wu, Di
论文数: 0 引用数: 0
h-index: 0
机构:
Zhengzhou Univ, Key Lab Mat Phys, Minist Educ, Sch Phys & Microelect, Zhengzhou 450052, Henan, Peoples R China Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China

Jie, Jiansheng
论文数: 0 引用数: 0
h-index: 0
机构:
Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China
Macau Univ Sci & Technol, Macao Inst Mat Sci & Engn, Taipa 999078, Macau, Peoples R China Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China

Lee, Chun-Sing
论文数: 0 引用数: 0
h-index: 0
机构:
City Univ Hong Kong, Dept Chem, Ctr Super Diamond & Adv Film COSADF, Hong Kong, Peoples R China Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China

Zhang, Xiaohong
论文数: 0 引用数: 0
h-index: 0
机构:
Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China
[26]
Enhanced photogating via pyroelectric effect induced by insulator layer for high-responsivity long-wavelength infrared graphene-based photodetectors operating at room temperature
[J].
Shimatani, Masaaki
;
Ogawa, Shinpei
;
Fukushima, Shoichiro
;
Okuda, Satoshi
;
Kanai, Yasushi
;
Ono, Takao
;
Matsumoto, Kazuhiko
.
APPLIED PHYSICS EXPRESS,
2019, 12 (02)

Shimatani, Masaaki
论文数: 0 引用数: 0
h-index: 0
机构:
Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan

Ogawa, Shinpei
论文数: 0 引用数: 0
h-index: 0
机构:
Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan

Fukushima, Shoichiro
论文数: 0 引用数: 0
h-index: 0
机构:
Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan

Okuda, Satoshi
论文数: 0 引用数: 0
h-index: 0
机构:
Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan

Kanai, Yasushi
论文数: 0 引用数: 0
h-index: 0
机构:
Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan

Ono, Takao
论文数: 0 引用数: 0
h-index: 0
机构:
Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan

Matsumoto, Kazuhiko
论文数: 0 引用数: 0
h-index: 0
机构:
Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan
[27]
Surface-Enhanced Raman Scattering Based on Controllable-Layer Graphene Shells Directly Synthesized on Cu Nanoparticles for Molecular Detection
[J].
Qiu, Hengwei
;
Huo, Yanyan
;
Li, Zhen
;
Zhang, Chao
;
Chen, Peixi
;
Jiang, Shouzhen
;
Xu, Shicai
;
Ma, Yong
;
Wang, Shuyun
;
Li, Hongsheng
.
CHEMPHYSCHEM,
2015, 16 (14)
:2953-2960

Qiu, Hengwei
论文数: 0 引用数: 0
h-index: 0
机构:
Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China

Huo, Yanyan
论文数: 0 引用数: 0
h-index: 0
机构:
Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China

Li, Zhen
论文数: 0 引用数: 0
h-index: 0
机构:
Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China

Zhang, Chao
论文数: 0 引用数: 0
h-index: 0
机构:
Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China

Chen, Peixi
论文数: 0 引用数: 0
h-index: 0
机构:
Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China

Jiang, Shouzhen
论文数: 0 引用数: 0
h-index: 0
机构:
Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China

Xu, Shicai
论文数: 0 引用数: 0
h-index: 0
机构:
Dezhou Univ, Shandong Prov Key Lab Funct Macromol Biophys, Inst Biophys, Coll Phys & Elect Informat, Dezhou 253023, Peoples R China Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China

Ma, Yong
论文数: 0 引用数: 0
h-index: 0
机构:
Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China

Wang, Shuyun
论文数: 0 引用数: 0
h-index: 0
机构:
Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China

Li, Hongsheng
论文数: 0 引用数: 0
h-index: 0
机构:
Shandong Canc Hosp & Inst, Dept Radiat Oncol, Key Lab Radiat Oncol Shandong Prov, Jinan 250117, Peoples R China Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China