Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

被引:51
作者
Yin, Jun [1 ]
Liu, Lian [1 ]
Zang, Yashu [2 ]
Ying, Anni [1 ]
Hui, Wenjie [1 ]
Jiang, Shusen [1 ]
Zhang, Chunquan [1 ]
Yang, Tzuyi [3 ]
Chueh, Yu-Lun [3 ]
Li, Jing [1 ]
Kang, Junyong [1 ]
机构
[1] Xiamen Univ, Pen Tung Sah Inst Micronano Sci & Technol, Collaborat Innovat Ctr Optoelect Semicond & Effic, Dept Phys, Xiamen 361005, Peoples R China
[2] Sanan Optoelect Co Ltd, Xiamen 361005, Peoples R China
[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
基金
中国国家自然科学基金;
关键词
HIGH-RESPONSIVITY; PERFORMANCE; OXIDE; PASSIVATION; TEMPERATURE; PHOTODIODES;
D O I
10.1038/s41377-021-00553-2
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Here, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of similar to 15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of -10 V, a 3.96-A W-1 responsivity with the photogain of similar to 5.8 for the peak response under 850-nm light illumination, and a 1.03-A W-1 responsivity with similar to 3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.
引用
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页数:10
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共 27 条
[21]   Graphene oxide modified PEDOT:PSS as an efficient hole transport layer for enhanced performance of hybrid silicon solar cells [J].
Sharma, Ruchi K. ;
Srivastava, Avritti ;
Kumari, Premshila ;
Sharma, Deepak ;
Tawale, J. S. ;
Agrawal, Ved Varun ;
Singh, Bhanu Pratap ;
Prathap, Pathi ;
Srivastava, Sanjay K. .
SURFACES AND INTERFACES, 2023, 36
[22]   Impact of an annealing atmosphere on band-alignment of a plasma-enhanced atomic layer deposition-grown Ga2O3/SiC heterojunction [J].
Shen, Yi ;
Wang, An-Feng ;
Ma, Hong-Ping ;
Qi, Xin ;
Yuan, Qilong ;
Yang, Mingyang ;
Qiu, Mengting ;
Zhang, Bingxue ;
Jiang, Nan ;
Zhang, Qingchun Jon .
MATERIALS TODAY PHYSICS, 2024, 49
[23]   Impact of Silicon Wafer Surface Treatment on the Morphology of GaP Layers Produced by Plasma Enhanced Atomic Layer Deposition [J].
Uvarov, A. V. ;
Sharov, V. A. ;
Kudryashov, D. A. ;
Gudovskikh, A. S. .
SEMICONDUCTORS, 2023, 57 (09) :415-422
[24]   Significant improvement in the photovoltaic stability of bulk heterojunction organic solar cells by the molecular level interaction of graphene oxide with a PEDOT: PSS composite hole transport layer [J].
Hilal, Muhammad ;
Han, Jeong In .
SOLAR ENERGY, 2018, 167 :24-34
[25]   Conformal MoS2/Silicon Nanowire Array Heterojunction with Enhanced Light Trapping and Effective Interface Passivation for Ultraweak Infrared Light Detection [J].
Mao, Jie ;
Zhang, Bingchang ;
Shi, Yihao ;
Wu, Xiaofeng ;
He, Yuanyuan ;
Wu, Di ;
Jie, Jiansheng ;
Lee, Chun-Sing ;
Zhang, Xiaohong .
ADVANCED FUNCTIONAL MATERIALS, 2022, 32 (11)
[26]   Enhanced photogating via pyroelectric effect induced by insulator layer for high-responsivity long-wavelength infrared graphene-based photodetectors operating at room temperature [J].
Shimatani, Masaaki ;
Ogawa, Shinpei ;
Fukushima, Shoichiro ;
Okuda, Satoshi ;
Kanai, Yasushi ;
Ono, Takao ;
Matsumoto, Kazuhiko .
APPLIED PHYSICS EXPRESS, 2019, 12 (02)
[27]   Surface-Enhanced Raman Scattering Based on Controllable-Layer Graphene Shells Directly Synthesized on Cu Nanoparticles for Molecular Detection [J].
Qiu, Hengwei ;
Huo, Yanyan ;
Li, Zhen ;
Zhang, Chao ;
Chen, Peixi ;
Jiang, Shouzhen ;
Xu, Shicai ;
Ma, Yong ;
Wang, Shuyun ;
Li, Hongsheng .
CHEMPHYSCHEM, 2015, 16 (14) :2953-2960