Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices

被引：14

作者：

Bera, M. K. ^{[1
]}

Song, J. ^{[1
]}

Ahmet, P. ^{[1
]}

Kakushima, K. ^{[2
]}

Tsutsui, K. ^{[2
]}

Sugii, N. ^{[2
]}

Hattori, T. ^{[1
]}

Iwai, H. ^{[1
]}

机构：

[1] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 06期

关键词：

RAY PHOTOELECTRON-SPECTROSCOPY; GE; MOSFETS; SUBSTRATE; LAYER;

D O I：

10.1088/0268-1242/25/6/065008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The feasibility of employing yttrium-scandium oxide (YScOx) as high-k gate dielectrics for germanium-metal-oxide-semiconductor (MOS) devices has been investigated. The composition and chemical structures of the film were studied using x-ray photoelectron spectroscopy (XPS). Conduction and valence band discontinuities at YScOx/Ge (100) interfaces were also determined by measuring the O 1s photoelectron energy loss and valence band spectra. Indeed, high-k (YScOx)/Ge MOS characteristics, exhibiting fairly good electrical characteristics, especially low leakage current density and low density of interface states, have been achieved due to the formation of stable Y-Sc-germanate at the interface. The effects of various scandium oxide (ScO) concentrations in YScOx on the electrical characteristics are also reported. It has been demonstrated that higher ScO concentration in YScOx may cause V-fb to shift to its even lower positive value even if considering hysteresis while it causes degradation in interfacial properties. Besides, the effects of several annealing treatments have been investigated in order to optimize the process conditions. This work suggests that ScO concentration up to 50% in YScOx along with post-metallization annealing treatment at 500 degrees C will be the key to ensure reasonable electrical performance of Ge MOS devices.

引用

页数：7

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